List of Thermal Expansion Coefficients (CTE) for Natural and Engineered Materials
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Materials | Linear Thermal Expansion Coefficient - α - |
---|---|
(10-6 m/(m K))*) |
|
ABS (Acrylonitrile butadiene styrene) thermoplastic | 73.8 |
ABS -glass fiber-reinforced | 30.4 |
Acetals | 106.5 |
Acetal - glass fiber-reinforced | 39.4 |
Acrylic | 75 |
Alumina (aluminium oxide, Al2O3) (Sputtering Target)(powders)(Milling media) (Sapphire/Single Crystal)(Planetary Milling Jars)(Roller Milling Jars)(High Purity Powders) | 8.1 |
Aluminum (Sputtering Target) | 21 - 24 |
Aluminum Alloy AlSi7Mg (Additive Manufacturing/3D Printing Powder) | 21-22 |
Aluminum Alloy AlSi10Mg (Additive Manufacturing/3D Printing Powder) | 20 |
Aluminum Alloy AlSi12 (Additive Manufacturing/3D Printing Powder) | 20 |
Aluminum Metaphosphate, Al(PO3)3 (High Purity Powder) | 9.6 |
Aluminum nitride (Sputtering Target)(AlN template on Sapphire) | 5.3 |
Amber | 50 - 60 |
Antimony (Sputtering Target) | 9 - 11 |
Arsenic | 4.7 |
Bakelite, bleached | 22 |
Barium | 20.6 |
Barium Fluoride, BaF2 (High Purity Powder)(Single crystal and Substrates)(Sputtering Targets) | 18.1 |
Barium ferrite, | 10 |
Barium Titanate, BaTiO3 (Sputtering Target) (Single Crystal Substrate) | 9.4 |
Benzocyclobutene | 42 |
Beryllium | 11.5 |
Bismuth (Sputtering Target) | 13 |
Bismuth Germanate, Bi4Ge3O12 (Scintillation Crystals) | 7 |
Bismuth Oxide, Bi2O3 (High Purity Powder)(Sputtering Target) | Parallel to a-26.7, b-6.6, c-9.0 |
Boron Carbide,B4C (Sputtering Target) | 4.5 |
Boron Nitride, BN (Sputtering Target) | 1.0 |
Brass | 18.7 |
Brick masonry | 5.5 |
Bronze | 18.0 |
Cadmium (Sputtering Target) | 30 |
Cadmium Difluoride, CdF2 (Sputtering Target) | 21.8 |
Cadmium Selenide, CdSe (Sputtering Target) | Parallel to a-6.26, c-4.28 |
Cadmium Sulfide, CdS (Sputtering Target) | Parallel to a-6.26, c-3.5 |
Cadmium Telluride, CdTe (Sputtering Target) | 4.8 |
Calcium | 22.3 |
Calcium Fluoride, CaF2 (Single Crystal)(Sputtering Target)(Eu doped Scintillation Crystal) | 18.85 |
Calcium Fluoride Europium doped, Eu:CaF2 (Eu doped Scintillation Crystal) | 19.5 |
Cast Iron Gray | 10.8 |
Caoutchouc | 66 - 69 |
Celluloid | 100 |
Cellulose acetate (CA) | 130 |
Cellulose acetate butynate (CAB) | 96 - 171 |
Cellulose nitrate (CN) | 80 - 120 |
Cement | 10.0 |
Cesium Iodide, CsI (Scintillation Crystals) | 54 |
Cerium (Sputtering Target) | 5.2 |
Cerium Dioxide, CeO2 (Sputtering Target) | 11.2 |
Cerium Fluoride, CeF3 (Scintillation Crystal) (Sputtering Target) | Parallel to a-12.9, c-16.5 |
Cerium Oxide, Ce2O3 (High Purity Powder) | 12 |
Chlorinated polyether | 80 |
Chlorinated polyvinylchloride (CPVC) | 66.6 |
Chromium (Sputtering Target) | 6.2 |
Chromium Boride, Cr5B3 (Sputtering Target) | 13.7 |
Chromium Carbide, Cr3C2 (Sputtering Target) | 10.3 |
Chromium Diboride CrB2 (Sputtering Target) | 6.2 - 7.5 |
Chromium Disilicide, CrSi2 (Sputtering Target) | Parallel to a-8.2, c-9.0 |
Chromium Monoboride, CrB | 12.3 |
Chromium Nitride, CrN | 2.3 |
Chromium Nitride, Cr2N | 9.4 |
Chromium Oxide, Cr2O3 (High Purity Powder)(Sputtering Target) | 9.0 |
Clay tile structure | 5.9 |
Cobalt (Sputtering Target) | 12 |
Cobalt Chrome Molybdenum alloy, CoCrMo (Additive Manufacturing/3D Printing Powder) | 11.5 |
Cobalt Chrome Tungsten alloy, CoCrW (Additive Manufacturing/3D Printing Powder) | 21 |
Cobalt Disilicide, CoSi2 | 10 |
Concrete | 14.5 |
Concrete structure | 9.8 |
Constantan | 18.8 |
Copper (Sputtering Target) | 16.6 |
Copper, Beryllium 25 | 17.8 |
Copper Tin alloy, CuSn10 (Additive Manufacturing/3D Printing Powder) | 18 |
Corundum, sintered | 6.5 |
Cupronickel 30% | 16.2 |
Diamond (Carbon) | 1.18 |
Duralumin | 23 |
Dysprosium (Sputtering Target) | 9.9 |
Dysprosium Oxide, Dy2O3 (High Purity Powder)(Sputtering Targets) | 6.6 |
Ebonite | 76.6 |
Epoxy, cast resins & compounds, unfilled | 45 - 65 |
Erbium (Sputtering Target) | 12.2 |
Erbium Oxide, Er2O3 (High Purity Powder)(Sputtering Targets) | 6.6 |
Ethylene ethyl acrylate (EEA) | 205 |
Ethylene vinyl acetate (EVA) | 180 |
Europium (Sputtering Target) | 35 |
Europium Oxide, Eu2O3 (High Purity Powder) | 6.4 |
Fluoroethylene propylene (FEP) | 135 |
Fluorspar, CaF2 (Single Crystal) (Sputtering Target) |
19.5 |
Gadolinium (Sputtering Target) | 9 |
Gadolinium Gallium Garnet (GGG), Gd3Ga5O12 (Single Crystal)(Nd doped Single Crystal) | 8 |
Gadolinium Oxide, Gd2O3 (High Purity Powder) | 7.6 |
Gadolinium Tetraboride, GdB4 | 7.0 |
Gallium | 37 |
Gallium Arsenide, GaAs (Sputtering Target) (Single Crystal Substrates) | 5.73 |
Gallium Oxide, Ga2O3 (Single Crystal Wafer)(High Purity Powder)(Sputtering Target) | Parallel to a-3.77, b-7.8, c-6.34 |
Gallium Nitride, GaN (Single Crystal) | 3.17 |
Germanium (Sputtering Target)(Single Crystal) | 5.9 |
Germanium Oxide, GeO2 (High Purity Powder) | 7.5 |
Germanium Telluride, GeTe (Sputtering Target) | 11.2 |
German silver | 18.4 |
Glass, hard | 5.9 |
Glass, Pyrex | 4.0 |
Glass, plate | 9.0 |
Gold (Sputtering Target) | 14.2 |
Gold - copper | 15.5 |
Gold - platinum | 15.2 |
Granite | 7.9 |
Graphite, pure (Carbon) (Sputtering Target) (Anode Materials) | 2 - 6 |
Gunmetal | 18 |
Gutta percha | 198 |
Hafnium (Sputtering Target) | 5.9 |
Hafnium Carbide, HfC (Sputtering Target) | 6.9 |
Hafnium Dioxide, HfO2 (Sputtering Target) | 6.0 |
Hafnium Disilicide, HfSi2 (Sputtering Target) | 16.4 |
Hafnium Nitride, HfN (Sputtering Target) | 6.9 |
Hard alloy K20 | 6 |
Hastelloy C22 (Sputtering Target) | 12.4 |
Hastelloy C276 (Sputtering Target) | 11.2 |
Hastelloy N (Sputtering Target) | 12.3 |
Holmium (Sputtering Target) | 11.2 |
Holmium Oxide, Ho2O3 (High Purity Powder)(Sputtering Targets) | 7.4 |
Ice, 0oC water | 51 |
Inconel 625 (Additive Manufacturing/3D Printing Powder) | 13.1 |
Inconel 718 (Additive Manufacturing/3D Printing Powder) | 12.8 |
Indium (Sputtering Target) | 33 |
Indium Antimonide, InSb (Sputtering Target) | 5.37 |
Indium Arsinide, InAs (Single Crystal)(Sputtering Target) |
4.52 |
Indium Gallium Zinc Oxide (IGZO), In2Ga2ZnO7 (Sputtering Target) | 4.31 |
Indium Oxide, In2O3 (High Purity Powder)(Sputtering Target) | 7.2 |
Indium Phosphide, InP (Single Crystal) | 4.5 |
Indium Sulfide, In2S3 (Sputtering Target) |
Tetragonal Form: Parallel to a-11.7, c-6.7 Trigonal Form: Parallel to a-14.1, c-26.7 |
Indium Tin Oxide (ITO), In2-xSnxO3 (Sputtering Target)(ITO coated glass and film) | 8 |
Invar | 1.5 |
Iridium (Sputtering Target) | 6.4 |
Iron, pure (Sputtering Target) | 12.0 |
Iron, cast | 10.4 |
Iron, forged | 11.3 |
Iron Boride, FeB (Sputtering Target) | 23 |
(Di)Iron Boride Fe2B (Sputtering Target) | 7.65 |
(Tri)Iron Carbide, Fe3C (Sputtering Target) | 8.6 |
Kapton | 20 |
Langasite (LGSO), La3Ga5SiO14 (Single Crystal) | 16 |
Langatate (LGT), La3Gao5.5Ta0.5O14 (Single Crystal) | 7.65 |
Lanthanum (Sputtering Target) | 12.1 |
Lanthanum Aluminate, LaAlO3 (Single Crystal)(Sputtering Target) | 9.4 |
Lanthanum Fluoride, LaF3 (Sputtering Target) | Parallel to a-15.8, c-11 |
Lanthanum Hexaboride, LaB6 (Sputtering Target) | 6.2 |
Lanthanum Manganate, LaMnO3 (Sputtering Target) | 11.62 |
Lanthanum Oxide, La2O3 (High Purity Powder) | 8.6 |
Lanthanum-Strontium Aluminium Tantalate (LSAT), (La0.18Sr0.82)(Al0.59Ta0.41)O3 (Single Crystal) | 10 |
Lead (Sputtering Target) | 28.9 |
Lead Fluoride, PbF2 (Single Crystal)(Sputtering Target) | 29 |
Lead Selenide, PbSe (Sputtering Target) | 19 |
Lead Sulfide, PbS (Sputtering Target) | 20.1 |
Lead Telluride, PbTe (Sputtering Target) | 20.4 |
Lead Tungstate, PbWO4 (Single Crystal) | Parallel to a-29.5, c-12.8 |
Limestone | 8 |
Lithium (Chips for Batteries) | 46 |
Lithium Aluminate, LiALO2 (Single Crystal) | Parallel to a-10.1, c-16.5 |
Lithium Fluoride, LiF (Sputtering Target)(High Purity Powder)(Single Crystal) | 37 |
Lithium Niobate, LiNbO3 (Single Crystal) (Sputtering Target) | Parallel to a-15.4, c-7.5 |
Lithium Tantalate, LiTaO3 (Single Crystal) | Parallel to a-16, c-4 |
Lutetium (Sputtering Target) | 9.9 |
Lutetium Aluminum Garnet (LuAG),Y3Al5O12 | 6.0 |
Lutetium Oxide, Lu2O3 (High Purity Powder) | 7.7 |
Macor | 9.3 |
Magnalium | 23.8 |
Magnesium (Sputtering Target) | 25 |
Magnesium Aluminate, MgAl2O4 (Single Crystal) | 6.72 |
Magnesium Fluoride,MgF2 (Sputtering Target)(Single Crystal)(High Purity Powder) (Single Crystal Substrates) |
Parallel to C axis 13.7 Perpendicular to C axis 8.48 |
Magnesium Oxide, MgO (Sputtering Target)(Crucible)(Single Crystal Substrate)(High Purity Powder) |
10.8 |
Manganese (Sputtering Target) | 22 |
Manganin | 18.1 |
Marble | 5.5 - 14.1 |
Masonry | 4.7 - 9.0 |
Mercury | 61 |
Mica | 3 |
Molybdenum (Sputtering Target) | 5 |
Molybdenum Boride, Mo2B (Sputtering Target) | 4.78 |
Molybdenum Carbide, Mo2C (Sputtering Target) | 7.8 |
Molybdenum Disilicide, MoSi2 (Sputtering Target) | Parallel to a = 5.6, c = 4.1 |
Molybdenum Oxide, MoO3 (Sputtering Target) | 5 |
Monel metal | 13.5 |
Mortar | 7.3 - 13.5 |
Neodymium (Sputtering Target) | 9.6 |
Neodymium Copper Oxide,Nd2CuO4 (Sputtering Target) | 10.1 |
Neodymium Fluoride, NdF3 (Sputtering Target) | Parallel to a-17.4, c-14.7 |
Neodymium Hexaboride, NdB6 (Sputtering Target) | 7.3 |
Neodymium Oxide, Nd2O3 (High Purity Powder) | 14.7 |
Nickel (Sputtering Target) | 13.0 |
Nickel Chromium (Nichrome), NiCr (Sputtering Target) | 14 |
Nickel Oxide, NiO (Sputtering Target) | 10 |
Niobium (Sputtering Target) | 7.3 |
Niobium Carbide, NbC (Sputtering Target) | 7.81 |
Niobium Disilicide, NbSi2 | Parallel to a = 9.1, c = 8.7 |
Niobium Nitride, NbN (Sputtering Target) | 10.1 |
Niobium Oxide, Nb2O5 (Sputtering Target) (High Purity Powder) | 5.6 |
Niobium Selenide, NbSe2 (Sputtering Target) | Parallel to a = 6.6, c = 19.9 |
Niobium Silicide, Nb5Si3 (Sputtering Target) | 7.6 |
Nylon, general purpose | 72 |
Nylon, Type 11, molding and extruding compound | 100 |
Nylon, Type 12, molding and extruding compound | 80.5 |
Nylon, Type 6, cast (Planetary Milling Jar)(Roller Milling Jar) | 85 |
Nylon, Type 6/6, molding compound | 80 |
Oak, perpendicular to the grain | 54 |
Osmium | 5 |
Palladium (Sputtering Target) | 11.8 |
Paraffin | 106 - 480 |
Phenolic resin without fillers | 60 - 80 |
Phosphor bronze | 16.7 |
Plaster | 16.4 |
Plastics | 40 - 120 |
Platinum (Sputtering Target) | 9.0 |
Plutonium | 54 |
Polyacrylonitrile | 70 |
Polyallomer | 91.5 |
Polyamide (PA) | 110 |
Polybutylene (PB) | 130 |
Polycarbonate (PC) | 70.2 |
Polycarbonate - glass fiber-reinforced | 21.5 |
Polyester | 123.5 |
Polyester - glass fiber-reinforced | 25 |
Polyethylene (PE) | 200 |
Polyethylene (PE) - High Molecular Weight | 108 |
Polyethylene terephthalate (PET) (Indium Tin Oxide on PET)(Monolayer Graphene on PET) | 59.4 |
Polyphenylene - glass fiber-reinforced | 35.8 |
Polypropylene (PP), unfilled (Single Crystal, Wafer Substrate Cases) | 100 - 200 |
Polypropylene - glass fiber-reinforced | 32 |
Polystyrene (PS) | 70 |
Polysulfone (PSO) | 55.8 |
Polyurethane (PUR), rigid (Planetary and Roller Milling Jars) | 57.6 |
Polyvinyl chloride (PVC) | 50.4 |
Polyvinylidene fluoride (PVDF) | 127.8 |
Porcelain, Industrial | 6.5 |
Potassium | 83 |
Potassium Bromide, KBr (Single Crystal) | 43 |
Potassium Chloride, KCl (Single Crystal) | 36 |
Potassium Tantalate, KTaO3 (Single Crystal) | 4.03 |
Praseodymium (Sputtering Target) | 6.7 |
Praseodymium Fluoride, PrF3 (Sputtering Target) | Parallel to a-16.4, c-14 |
Praseodymium Oxide, Pr6O11 (High Purity Powder)(Sputtering Targets) | 12 |
Promethium | 11 |
Quartz (Single Crystal Wafer)(Monolayer Graphene on Quartz) | 0.77 - 1.4 |
Rhenium (Sputtering Target) | 6.7 |
Rhenium Disilicide, ReSi2 | Parallel to a = 4.2, c = 7.5 |
Rhodium | 8 |
Rock salt | 40.4 |
Rubber, hard | 77 |
Ruthenium (Sputtering Target) | 9.1 |
Samarium (Sputtering Target) | 12.7 |
Samarium Oxide, Sm2O3 (High Purity Powder)(Sputtering Targets) | 8.5 |
Sandstone | 11.6 |
Sapphire (Single Crystal and Wafers) | Please see this page |
Scandium (Sputtering Target) | 10.2 |
Scandium Oxide (High Purity Powder)(Sputtering Targets) | 6.7 |
Selenium (Sputtering Target) | 3.8 |
Silicon (Single Crystal Wafer)(Sputtering Target)(N-type Sputtering Target)(P-type Sputtering Target) | Please see this page |
Silicon Carbide, SiC (Single Crystal Wafer) (Sputtering Target) | Please see this page |
Silicon Dioxide (Fused Silica, amorphous),
SiO2 (Sputtering Target)(Wafers and Substrates)(High Purity Powder) |
5.6 |
Silicon Nitride,Si3N4 (Sputtering Target) | 4.3 |
Silver (Sputtering Target) | 19.5 |
Sitall | 0.15 |
Slate | 10.4 |
Sodium | 70 |
Sodium Chloride, NaCl (Single Crystal) | 44 |
Sodium Fluoride, NaF (Sputtering Target) | 34 |
Solder lead - tin, 50% - 50% | 24.0 |
Speculum metal | 19.3 |
Steatite | 8.5 |
Steel | 12.0 |
Steel 18 Ni(300) (Maraging) (Additive Manufacturing/3D Printing Powder) | 10.3 |
Steel Invar 36 (Additive Manufacturing/3D Printing Powder) | 1.3 |
Steel M2 (Tool)(Additive Manufacturing/3D Printing Powder) | 11 |
Steel Stainless Austenitic (304) (Milling media)(Planetary Milling Jars)(Roller Milling Jars) | 17.3 |
Steel Stainless Austenitic (310) | 14.4 |
Steel Stainless Austenitic (316)(Additive Manufacturing/3D Printing Powder)(Milling media)(Roller Milling Jars)(Planetary Milling Jars) | 16.0 |
Steel Stainless Ferritic (410)(Additive Manufacturing/3D Printing Powder) | 9.9 |
Steel Stainless 17-4PH (Additive Manufacturing/3D Printing Powder) | 10.8 |
Steel Stainless 440C (Additive Manufacturing/3D Printing Powder) | 10.2 |
Strontium | 22.5 |
Strontium Fluoride, SrF2 (Sputtering Target) | 18.4 |
Strontium Titanate, SrTiO3 (Sputtering Target)(Single Crystal Wafers & Substrates) (Fe doped single Crystal)(Nb doped single Crystal) | 9 |
Tantalum (Sputtering Target) | 6.5 |
Tantalum Carbide, TaC (Sputtering Target) | 6.3 |
Tantalum Diboride, TaB2 | 8.2 |
Tantalum Disilicide, TaSi2 (Sputtering Target) | Parallel to a = 6.8, c = 6.1 |
Tantalum Nitride, TaN (Sputtering Target) | 3.6 |
Tantalum Pentoxide, Ta2O5 (Sputtering Target)(High Purity Powder) | 6.7 |
Tantalum Sulfide, TaS2 (Sputtering Target) | 12 - 15 |
Teflon, (Sputtering Target)(Planetary Milling Jars)(Roller Milling Jars) | 120 - 170 |
Tellurium (Sputtering Target) | 36.9 |
Tellurium Dioxide,TeO2 (Single Crystal) | Parallel to a = 19.5, c = 6.1 |
Terbium (Sputtering Target) | 10.3 |
Terne | 11.6 |
Thallium | 29.9 |
Thorium | 12 |
Thulium (Sputtering Target) | 13.3 |
Thulium Oxide, Tm2O3 (High Purity Powder)(Sputtering Targets) | 6.6 |
Tin (Sputtering Target) | 23.4 |
Tin Oxide SnO2 (Sputtering Targets) | 4.0 |
Titanium (Sputtering Target) | 8.6 |
Titanium Alloy Ti-6Al-4v (TC4)(Additive Manufacturing/3D Printing Powder) | 8.7 - 9.1 |
Titanium Carbide, TiC (Sputtering Target) | 7.4 |
Titanium Diboride, TiB2 (Sputtering Targets) | 7 |
Titanium Dioxide (Rutile), TiO2 (Single Crystal)(High Purity Powder)(Sputtering Target) | Parallel to a = 7.14, c = 9.19 |
Titanium Disilicide, TiSi2 (Sputtering Target) | Parallel to a = 6.9, c = 5.4 |
Titanium Monoxide, TiO (Sputtering Target) | 6.6 |
Titanium Nitride, TiN (Sputtering Target) | 9.4 |
Titanium (III) Oxide, Ti2O3 (High Purity Powder) | 7.6 |
Titanium Silicide, Ti5Si3 | 7.5 |
Topas | 5 - 8 |
Tungsten (Sputtering Target) | 4.4 |
Tungsten Carbide (Cobalt Stabilized), WC-6%Co (Sputtering Target)(Milling Media) (Planetary Milling Jars)(Pellet Pressing Die) | 5.5(pure) 4.9 (6% Co) |
Tungsten Diboride, WB2 | Parallel to a-6.5, c-8.8 |
Tungsten Diselenide, WSe2 (Sputtering Target) | 7 |
Tungsten Disilicide, WSi2 (Sputtering Target) | Parallel to a-6.04, c-9.39 |
Tungsten Disulfide, WS2 (Sputtering Target) | 7 - 10 |
Tungsten Ditelluride, WTe2 (Sputtering Target) | Parallel to a-10.1, b-7.5, c-4.5 |
Tungsten (VI) Oxide, WO3 (High purity Powder)(Sputtering Target) | 8 - 15 |
Uranium | 13.9 |
Vanadium (Sputtering Target) | 8 |
Vanadium Carbide, VC (Sputtering Target) | 7.3 |
Vanadium Disilicide, VSi2 (Sputtering Target) | Parallel to a-8.0, c-7.5 |
Vanadium Nitride, VN | 8.1 |
Vanadium Oxide, V2O5 (Sputtering Target) | Parallel a-3.3, b- -1.7, c-42.2 |
Vinyl Ester | 16 - 22 |
Vulcanite | 63.6 |
Wax | 2 - 15 |
Wedgwood ware | 8.9 |
Wood, fir | 3.7 |
Wood, parallel to grain | 3 |
Wood, across (perpendicular) to grain | 30 |
Wood, pine | 5 |
YCOB, Ca4YO(BO3)3 (NLO Crystal) |
Parallel a-9.9, b-8.2, c-12.8 |
Ytterbium (Sputtering Target) | 26.3 |
Ytterbium Fluoride, YbF3 (Sputtering Target) | 8.5 |
Ytterbium Oxide, Yb2O3 (High Purity Powder)(Sputtering Targets) | 8.5 |
Yttrium (Sputtering Target) | 10.6 |
Yttrium Aluminum Garnet (YAG),Y3Al5O3 (YAG Single Crystal)(Ce:YAG single Crystal)(Er:YAG Single Crystal)(Nd:YAG Single Crystal)(Yb:YAG Single Crystal)(Ce:YAG LED Phosphor) | 6.1(undoped) |
Yttrium Fluoride, YF3 (Sputtering Target) | 28.5 |
Yttrium Oxide, Y2O3 (High Purity Powder)(Sputtering Targets) | 8.1 |
Yttrium Orthovanadate, YVO4 (Single Crystal) (Nd doped Single Crystal) | Parallel to a = 4.43, c = 11.37 |
Zinc (Sputtering Target) | 29.7 |
Zinc Oxide, ZnO (Single Crystal)(Sputtering Target)(High Purity Powder) | Parallel to a = 6.5, c = 3.7 |
Zinc Selenide, ZnSe (Sputtering Target) | 7.1 |
Zinc Sulfide, ZnS (Sputtering Target) | 6.5 |
Zinc Telluride, ZnTe (Sputtering Target) | 8.19 |
Zirconium (Sputtering Target) | 5.7 |
Zirconium Carbide, ZrC (Sputtering Target) | 6.7 |
Zirconium Diboride, ZrB2 (Sputtering Target) | Parallel to a = 6.7, c = 6.9 |
Zirconium Disilicide, ZrSi2 (Sputtering Target) | Parallel to a = 1.1, c = 8.6 |
Zirconium Nitride, ZrN (Sputtering Target) | 7.2 |
Zirconia, ZrO2 (High Purity Powder) | 7 |
Yttria Stabilized Zirconia (YSZ), 3-8% Y2O3 /ZrO2 (Sputtering Target)(Single Crystal)(Milling Media)(Planetary Milling Jars)(High Purity Powder) | 3% = 10.8, 8% = 10.5 |
*) m/m = meter per meter
Most values for temperature at 25 oC (77 oF).
- tK = tC + 273.16
- 1 in (inch) = 25.4 mm
- 1 ft (foot) = 0.3048 m
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