InAs Indium Arsenide Single Crystal
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1 ~ 3.8 um. The detectors are usually photovoltaicphotodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Find indium arsenide for sale here today
Available Orientation: <100>
Available Sizes: 5x5x0.5 mm, 10x10x0.5 mm, 2 inch diameter, 30 mm diameter.
Doping Options: Undoped, S doping, Zn doped, and Sn doped.
|Molar mass||189.740 g/mol|
|Melting point||942°C (1,728°F; 1,215K)|
|Band gap||0.354 eV (300 K)|
|Electron mobility||40000 cm2/(V*s)|
|Thermal conductivity||0.27 W/(cm*K) (300 K)|
a = 6.0583 Å
We Also Recommend
1 Cassette (qty. 25) of 100 mm N Type (P-doped) Prime Grade Silicon Wafer <100>, SSP, 1-10 ohm-cm
1 Cassette (qty. 25) of 100 mm P Type (B-doped) Prime Grade Silicon Wafer <100>, SSP, 10-20 ohm-cm