MSE PRO Boron Carbide Sputtering Target B₄C

Boron Carbide Sputtering Targets Specifications

To add a Cu Backing Plate with Indium Bonding for Sputtering Targets  

• Purity: 99.5%
• Density: 2.51g/cc
• Shape: Discs, Plate, Step ( Dia 300mm, Thickness 1mm) Rectangle, Sheet, Step ( Length1000mm,Width 300mm, Thickness 1mm) Tube( Diameter< 300mm, Thickness >2mm, )
• Custom sizes are available.
• Application: B₄C in general are used for wear-resistant films and semi-conducting films.

B4C are used as diffusion barriers in both silicon and III-V device technology in multilevel metallization schemes involving aluminum as a second level.

Boron Carbide Powder - B₄C

• Purity: 99.5%,98%
• Shape: Powder