News — Gallium Nitride
What are the Differences Between GaN and GaAs RF Power Amplifiers?
Posted by MSE Supplies on
The need for high power in the VHF, UHF, and microwave bands has led to transistors that can easily supply tens to hundreds of watts at RF frequencies to 10 GHz and beyond. Most of these devices are made with gallium arsenide (...
Pulsed RF power device markets up to 4GHz: GaN, SiC, Si and GaAs based technologies
Posted by MSE Supplies on
The high-power pulsed RF semiconductor device market is primarily driven by several specific sub-segments. They are as follows: Avionics Sub-1 GHz Radar L-Band Radar S-Band Radar The end-customers for these devices are primaril...
Transition metal impurities can kill the efficiency of GaN-based LEDs
Posted by MSE Supplies on
Using advanced first-principles calculations, University of California, Santa Barbara (UCSB) researchers have demonstrated the mechanism by which transition metal impurities – iron in particular – can act as nonradiative recomb...
Gallium Nitride (GaN) substrates market to cross $4 billion USD by 2020: It's Applications and Market
Posted by MSE Supplies on
The gallium nitride (GaN) substrates market is set to cross $4 billion USD by 2020, according to the market research report “Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on sapphire, GaN on Si, GaN on SiC, GaN...
GaN Power Business will Grow at an 86% Annual Growth Rate and Reach $280M by 2021
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The GaN power market, however, remains small compared to the gigantic $335 billion silicon semiconductor market. MSE Supplies is a leading global supplier of GaN single crystal substrates with low dislocation density and unifor...