Menu

News — Gallium Nitride

Market Research Shows that Gallium Nitride (GaN) Technology Is Set To Replace the Silicon Technology

Posted by MSE Supplies on

MSE Supplies is a leading supplier (direct from the factory) of free standing GaN single crystals, GaN substrate on Sapphire, and GaN HEMT wafers.  Gallium Nitride (GaN) has a wide band gap and owing to its advanced features such as high breakdown voltage, high switching frequencies, enhanced power efficiency, high conduction and thermal stability, GaN is largely being preferred for numerous applications. These characteristics have enabled GaN power semiconductors to penetrate into various high power applications such as inverters for home appliances, inverters for trains, broadband wireless networks systems, power converter circuits, turbines, industrial and heavy electrical systems, and electric and...

Read more →

What Will Future Smart and Connected Cars Look Like with GaN Technology

Posted by MSE Supplies on

GaN technology is disruptive, in the best sense of the word, making possible what was once thought to be impossible – eGaN® technology is 10 times faster, significantly smaller, and with higher performance at costs comparable to silicon-based MOSFETs. The inevitability of GaN displacing the aging power MOSFET is becoming clearer with domination of most existing applications and enabling new ones. www.msesupplies.com is a leading supplier of free standing GaN single crystal and GaN Template on Sapphire. Order yours today!  This posting highlights the contribution GaN technology is making to several automobile applications – the increasingly complex infotainment system, all important...

Read more →

Gallium Nitride (GaN) is Becoming the New Silicon

Posted by MSE Supplies on

By Rob Matheson MIT News office Gallium nitride electronics could drastically cut energy usage in data centers, consumer devices. An exotic material called gallium nitride (GaN) is poised to become the next semiconductor for power electronics, enabling much higher efficiency than silicon. In 2013, the Department of Energy (DOE) dedicated approximately half of a $140M research institute for power electronics to GaN research, citing its potential to reduce worldwide energy consumption. Now MIT spinout Cambridge Electronics Inc. (CEI) has announced a line of GaN transistors and power electronic circuits that promise to cut energy usage in data centers, electric cars,...

Read more →

Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics Report by Yole Developpement

Posted by MSE Supplies on

View Gallium Nitride (GaN) product offerings on MSE Supplies website: https://www.msesupplies.com/collections/single-crystals-wafers-and-crystal-substrates ------------------------------------------------------------------------------------------- Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics Report by Yole Developpement http://www.slideshare.net/Yole_Developpement/yole-bulk-ganoctober2013reportsample Transcript 1. Bulk & Free-Standing GaN Market analysis for free-standing bulk GaN substrates in laser diode, LED and power electronics applications T EM PP LO VE 2013 edition Soraa LE O OSRAM Y  2. Targeted Applications • Today, GaN substrates have three targeted applications: laser diode, LED and power electronics. In the following three chapters, we will have a detailed discussion for each application. NT E Bulk GaN substrates Laser diode Projection...

Read more →

220 gallium nitride MOCVD reactors to be installed in 2015 for LED production

Posted by MSE Supplies on

View Gallium Nitride (GaN) product offerings on MSE Supplies website: http://www.msesupplies.com/collections/thin-film-processing/gan ------------------------------------------------------------------------------------------- According to John Wallace, Editor of LaserFocusWorld, "LEDs as a business are growing rapidly in China, spurring purchase of the high-unit-cost capital equipment needed for LED fabrication. Due to the aggressive expansion plans of some Chinese LED companies, 220 metal-organic chemical-vapor-deposition (MOCVD) gallium nitride (GaN) reactors will be installed in 2015, according to the latest data in the IHS LED Intelligence Service. (MOCVD reactors are used to deposit GaN-based epitaxial films on substrates such as sapphire, silicon, or GaN, providing the LED's light-emitting structure.)" Top 20 cumulative MOCVD merchant...

Read more →