According to a market research report published by Research and Markets, the global gallium nitride (GaN) substrates market size is forecast to grow at a CAGR of 11.75% from 2017 to 2022, and will reach the total market...
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Market Research illustrates the growth opportunities of the global GaN semiconductor devices at US$3,438.4 million by 2024. The market, which had a valuation of US$870.9 mn in 2015, is expected to exhibit an exponential CAGR of 17.0% over...
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The need for high power in the VHF, UHF, and microwave bands has led to transistors that can easily supply tens to hundreds of watts at RF frequencies to 10 GHz and beyond. Most of these devices are...
Read MoreThe high-power pulsed RF semiconductor device market is primarily driven by several specific sub-segments. They are as follows: Avionics Sub-1 GHz Radar L-Band Radar S-Band Radar The end-customers for these devices are primarily the worldwide air traffic control...
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Using advanced first-principles calculations, University of California, Santa Barbara (UCSB) researchers have demonstrated the mechanism by which transition metal impurities – iron in particular – can act as nonradiative recombination centers in nitride semiconductors. The work highlights that such...
Read MoreThe gallium nitride (GaN) substrates market is set to cross $4 billion USD by 2020, according to the market research report “Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on sapphire, GaN on Si, GaN on SiC,...
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