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3D ReRAM, a promising candidate for high density high speed non-volatile memory (NVM)

Posted by MSE Supplies on

With the progress in network virtualization, efficient data center operation raises the high demand for faster memory technology with higher density. 3D Resistance RAM (ReRAM) arrays, a likely candidate for replacing NAND Flash, have the potential for the next generation high density non-volatile memory (NVM). Crossbar, a six year-old start-up with ReRAM expertise, recently announced embedded 40nm ReRAM with CMOS process sampling from SMIC (Semiconductor Manufacturing International Corp. Shanghai, China).  Crossbar says the technology will scale to 16nm and 10nm. Comparing to NAND, the 3D ReRAM technology can deliver 20X faster write/read performance, 20x lower power consumption and 10x endurance...

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