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Pulsed RF power device markets up to 4GHz: GaN, SiC, Si and GaAs based technologies

Posted by MSE Supplies on

The high-power pulsed RF semiconductor device market is primarily driven by several specific sub-segments. They are as follows: Avionics Sub-1 GHz Radar L-Band Radar S-Band Radar The end-customers for these devices are primarily the worldwide air traffic control system both airborne and ground-based, and commercial and military radar systems. Markets for pulsed RF power devices up to 4GHz will show continued growth over the next five years to more than $250m by 2021, despite current economic and political turmoil, forecasts a report by ABI Research. MSE Supplies is a leading supplier of GaN and SiC crystal substrates.  While their association...

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2016 R&D 100 Award for High Temperature SiC Device for Electric Vehicles

Posted by MSE Supplies on

Wolfspeed, A Cree Company, a leading global supplier of silicon carbide (SiC) power products — including best-in-class SiC MOSFETs, Schottky diodes, and modules — won a 2016 R&D 100 Award for its high temperature, wide bandgap (WBG) underhood inverter for electric vehicles. Presented by the R&D 100 Awards Committee and R&D Magazine and elected by an independent panel of more than 50 judges, the 54th annual R&D 100 Awards honours the 100 most innovative technologies and services of the past year. Award winners are recognised for their contributions to advancing science and technology across five primary categories: analytical/test, IT/electrical, mechanical...

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