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The Demand is Surging for SiC Substrates and Power Semiconductors

The Demand is Surging for SiC Substrates and Power Semiconductors

Posted by MSE Supplies Admin on

Note: This blog was adapted from an original article written by Mark LaPedus at Semiconductor Engineering.  The demand for silicon carbide (SiC) substrates and power semiconductors is surging driven by the rapid growth of elect...

Pulsed RF power device markets up to 4GHz: GaN, SiC, Si and GaAs based technologies

Posted by MSE Supplies on

The high-power pulsed RF semiconductor device market is primarily driven by several specific sub-segments. They are as follows: Avionics Sub-1 GHz Radar L-Band Radar S-Band Radar The end-customers for these devices are primaril...

2016 R&D 100 Award for High Temperature SiC Device for Electric Vehicles

2016 R&D 100 Award for High Temperature SiC Device for Electric Vehicles

Posted by MSE Supplies on

Wolfspeed, A Cree Company, a leading global supplier of silicon carbide (SiC) power products — including best-in-class SiC MOSFETs, Schottky diodes, and modules — won a 2016 R&D 100 Award for its high temperature, wide band...