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News — Gallium Nitride

The Best Method to Detect Defects in Gallium Nitride? Light

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Researchers at Tohoku University have discovered a method to quickly, cost-effectively, and non-destructively detect carbon impurities in nitride-based crystals that are used in electrical and optical devices such as LEDs and transistors.  Light can be used to analyze the crystals for defects through omnidirectional photoluminescence (ODPL) spectroscopy, which is a marked improvement over the current methodologies available to the semiconductor industry.  ODPL illuminates the crystal, in this case gallium nitride (GaN), and is absorbed by it, exciting the electrons within.  When they return to their ground state, the crystal emits light to dissipate the absorbed energy.  Spectroscopy will then determine...

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Revolutionize Wireless Communication Transistors with Gallium Nitride

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Researchers at the University of Delaware have developed a new, high-electron mobility transistor based on gallium nitride (GaN) with a barrier of indium aluminum-nitride on top of a silicon substrate.  Among its record-setting properties, the new transistor demonstrates the following: Low gate leakage current that ensures over the operation of the device, it does not lose a significant amount of current in the form of heat and general efficiency loss High on/off current ratio which generates a large, measureable difference in the magnitude of current that is transmitted when the device is in its on state versus its off state...

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What Governs Crystal Growth? Scientists Have Revealed a Fundamental Phenomenon

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Researchers at the University of Illinois at Chicago have used computer-based simulations to discover the general mechanism that governs crystal growth in materials – fluctuations in the solvent shield.  The solvent shield is a molecular shell comprised of solvent molecules that coalesce around a crystalline material when said material is immersed within a solvent.  Fluctuations in this shield allow molecules to break free and incorporate themselves into the crystal's surface in order to grow the overall structure, molecule by molecule.  The temperature, the solvent type, and the number of solvent molecules are all controllable variables that determine these shell fluctuations. ...

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Gallium Nitride (GaN) Substrates Market Size at 11.75% Growth Rate from 2017 to 2022

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According to a market research report published by Research and Markets, the global gallium nitride (GaN) substrates market size is forecast to grow at a CAGR of 11.75% from 2017 to 2022, and will reach the total market size of US$442.084 million by 2022, increasing from US$253.700 million in 2017. The ability to provide wider bandgap, high breakdown voltage, larger critical electric field, and high thermal conductivity is driving the growth of gallium nitride substrates market leading to a shift of industry manufacturers from silicon technology to gallium nitride substrates. MSE Supplies is a leading supplier of gallium nitride (GaN)...

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GaN Semiconductor Devices Market to Grow at 17% CAGR By 2024 and Reach >US$3.4 Billion

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Market Research illustrates the growth opportunities of the global GaN semiconductor devices at US$3,438.4 million by 2024. The market, which had a valuation of US$870.9 mn in 2015, is expected to exhibit an exponential CAGR of 17.0% over the period between 2016 and 2024, which brings tremendous opportunities for all the players from R&D to device manufacturers and system designers. As compared to gallium arsenide (GaAS) and silicon carbide (SiC), Gallium nitride (GaN) is a new technology and is a wide band gap semiconductor material. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and...

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