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News — Gallium Nitride

GaN Semiconductor Devices Market to Grow at 17% CAGR By 2024 and Reach >US$3.4 Billion

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Market Research illustrates the growth opportunities of the global GaN semiconductor devices at US$3,438.4 million by 2024. The market, which had a valuation of US$870.9 mn in 2015, is expected to exhibit an exponential CAGR of 17.0% over the period between 2016 and 2024, which brings tremendous opportunities for all the players from R&D to device manufacturers and system designers. As compared to gallium arsenide (GaAS) and silicon carbide (SiC), Gallium nitride (GaN) is a new technology and is a wide band gap semiconductor material. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and...

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What are the Differences Between GaN and GaAs RF Power Amplifiers?

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The need for high power in the VHF, UHF, and microwave bands has led to transistors that can easily supply tens to hundreds of watts at RF frequencies to 10 GHz and beyond. Most of these devices are made with gallium arsenide (GaAs) or gallium nitride (GaN). MSE Supplies is a leading supplier of high quality crystal substrates, including GaAs and GaN.   Table Of Contents Semiconductor Types Transistor Types GaAs RF Power Amplifers GaN RF Power Amplifiers Conclusion  Semiconductor Types GaAs and GaN are compound semiconductors. Known as III-V semiconductors, they fall into categories of elements with either three...

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Pulsed RF power device markets up to 4GHz: GaN, SiC, Si and GaAs based technologies

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The high-power pulsed RF semiconductor device market is primarily driven by several specific sub-segments. They are as follows: Avionics Sub-1 GHz Radar L-Band Radar S-Band Radar The end-customers for these devices are primarily the worldwide air traffic control system both airborne and ground-based, and commercial and military radar systems. Markets for pulsed RF power devices up to 4GHz will show continued growth over the next five years to more than $250m by 2021, despite current economic and political turmoil, forecasts a report by ABI Research. MSE Supplies is a leading supplier of GaN and SiC crystal substrates.  While their association...

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Transition metal impurities can kill the efficiency of GaN-based LEDs

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Using advanced first-principles calculations, University of California, Santa Barbara (UCSB) researchers have demonstrated the mechanism by which transition metal impurities – iron in particular – can act as nonradiative recombination centers in nitride semiconductors. The work highlights that such impurities can have a detrimental impact on the efficiency of light-emitting diodes (LEDs) based on gallium nitride or indium gallium nitride. This is a schematic illustration of Shockley-Read-Hall (SRH) recombination due to iron in GaN. Iron is a deep acceptor with a defect level (black line) close to the GaN conduction band (green). The charge density corresponding to this localized level is...

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Gallium Nitride (GaN) substrates market to cross $4 billion USD by 2020: It's Applications and Market

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The gallium nitride (GaN) substrates market is set to cross $4 billion USD by 2020, according to the market research report “Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on sapphire, GaN on Si, GaN on SiC, GaN on GaN); By Products (Blu-ray Disc (BD), LEDs, UV LEDs) By Industry (Consumer Electronics, Telecom, Industrial, Power, Solar, Wind)-Forecast(2015-2020)”, published by IndustryARC. Gallium Nitride (GaN) is a semiconductor compound material which has proved to be advantageous in comparison to the other conventional materials such as Silicon, Silicon Carbide, Aluminum, and so on. GaN substrates are essential materials which are deployed across...

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