Specification:

Grade	Zero MPD Grade	Production Grade	Research Grade	Dummy Grade
Diameter	100.0 mm +/- 0.5 mm
Thickness	500 um +/- 25 um
Wafer Orientation	On axis: <0001> +/- 0.5 deg		On axis: <0001> +/- 2.0 deg
Micropipe Density for 95% of Wafers (MPD)	≤ 1 cm^-2	≤ 5 cm^-2	≤ 15 cm^-2	≤ 30 cm^-2
Electrical Resistivity	≥ 1E9	≥ 1E7	≥ 1E5	≥ 1E5
Dopant	Undoped
Primary Flat Orientation	{11-20} +/- 5.0 deg
Primary Flat Length	32.5 mm +/- 3.0 mm
Secondary Flat Length	18.0 mm +/- 2.0 mm
Secondary Flat Orientation	Silicon face up: 90 deg CW from primary flat +/- 5.0 deg
Edge Exclusion	3 mm
LTV/TTV/Bow /Warp	3 um /10 um /30 um /40 um (Zero MPD grade, Production grade and Research grade)
LTV/TTV/Bow /Warp	5 um /15 um /40 um /45 um (Dummy grade)
Surface Roughness	C-face: Optical Polish
Surface Roughness	Si-face: CMP
Cracks (inspected by high intensity light)	None	None	None	None
Hex Plates (inspected by high intensity light*)	None	None	None	Cumulative area 10%
Polytype Areas (inspected by high intensity light*)	Cumulative area 1%	Cumulative area 5%	Cumulative area 5%	Cumulative area 10%
Scratches (inspected by high intensity light)	≤ 5 scratches and cumulative length ≤ 150 mm			≤ 10 scratches and cumulative length ≤ 200 mm
Edge Chipping	None permitted ≥ 0.5 mm width and depth		2 allowed, ≤ 1 mm width and depth	5 allowed, ≤ 5 mm width and depth
Surface Contamination (inspected by high intensity light)	None

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property	4H-SiC Single Crystal
Lattice Parameters (Å)	a=3.076 c=10.053
Stacking Sequence	ABCB
Density	3.21
Mohs Hardness	~9.2
Thermal Expansion Coefficient (CTE) (/K)	4-5 x 10^-6
Refraction Index @750 nm	no = 2.61 ne = 2.66
Dielectric Constant	c ~ 9.66
Doping Type	Undoped Semi-insulating
Thermal Conductivity (W/cm-K @298 K) (Semi-insulating type)	a~4.9 c~3.9
Band-gap (eV)	3.23
Break-Down Electrical Field (V/cm)	3-5 x 10⁶
Saturation Drift Velocity (m/s)	2.0 x 10⁵
Wafer and Substrate Sizes	Wafers: 4, 6 inch; other sizes are available and can be custom-made upon request
Product Grades	A Grade Zero micropipe density (MPD 1 cm^-2) B Grade Production grade (MPD 5 cm^-2) C Grade Research grade (MPD 15 cm^-2) D Grade Dummy grade (MPD 30 cm^-2)

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.