Aluminum Nitride (AlN) Ceramic Substrate is made of high purity AlN ceramics. AlN is a white ceramic material with excellent comprehensive properties. These properties include excellent thermal conductivity (>170W/mK), electrical insulation and heat radiation, which make it suitable for electrical applications. AlN is also widely used in semiconductor industry for the replacement of Beryllium Oxide (BeO) due to that AlN isn't hazardous under machining. Other properties also include resistance to thermal shock, low dielectric constant and dielectric loss, and a coefficient of thermal expansion compatible with silicon, which make AlN substrate an ideal material for semiconductor industry and electronic device packaging.

Specification:

Properties	High Thermal AlN
Thermal conductivity at RT (W/m・K)	250
Heat radiation at 100°C	0.93
Thermal expansion coefficient (10^-6/°C)	4.5
Insulation resistance at RT (Ω.cm)	> 10¹³
Dielectric voltage at RT (kV/mm)	10
Dielectric constant (1MHz)	8.8
Dielectric loss (10^-41MHz)	5
Flexural strength (MPa)	300
Density (g/cm³)	3.32
Yttria (%)	3.4
Oxygen (%)	1.7

References:

1. Aluminum nitride-an alternative ceramic substrate for high power applications in microcircuits. IEEE transactions on components, hybrids, and manufacturing technology 7, no. 4 (1984): 399-404.

2. Ceramic substrates for high voltage power electronics: past, present and future. In 2019 IEEE International Workshop on Integrated Power Packaging (IWIPP), pp. 91-96. IEEE, 2019.

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