4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates
4 in Silicon Carbide 4H-SiC N-Type Ingot, Production Grade
MSE PRO 2" JGS3 Fused Silica Wafer, 500 μm Thick, DSP, w/ Bevel, Primary Flat Only
MSE PRO 1" JGS3 Fused Silica Wafer, 500 μm Thick, DSP, w/ Bevel, Primary Flat Only
6 in Silicon Carbide 4H-SiC N-Type SiC Ingot
MSE PRO Customized Silicon Bonded Wafer (4"-8")
6 inch N-type SiC Epitaxial Wafers on SiC Substrates
Silicon Germanium (SiGe) Epitaxial Wafer
Customized Germanium Tin (GeSn) Epitaxial Wafer On Silicon Substrate
Customized Silicon Germanium (SiGe) Epi Wafer
MSE PRO Customized Polycrystalline CVD Diamond Wafer
MSE PRO Customized Silicon-on-Insulator (SOI) Wafer (4"-8")
Customized GaN-on-SiC Epitaxial Wafers, 100mm and 150mm
Silicon Carbide Crystal Ingots N-type or Semi-insulating
Customized SiC Epitaxial Wafers on SiC Substrates
InAs Indium Arsenide Single Crystal
