MSE PRO™ 6 inch N-type SiC Epitaxial Layer on SiC Substrates, Epi Thickness: 11 um

MSE Supplies offers SiC Epitaxial Layer on SiC substrate. They have the advantages of operating under high-voltage, high electric current, and at high temperatures compared to semiconductor devices based on silicon. These unique features of SiC epitaxial wafers lead to the miniaturization of devices, enabling smaller and lighter power control modules to be made. They are often used for power devices (schottky diodes, MOSFETs, JEFTs, BJTs, IGBTs), thyristors for green energy systems (solar inverters), hybridand electric vehicles and numerous other energy-efficient systems.

Typical Specification:

Substrate
Diameter	6 inch (150 mm)
Thickness	350um
Thickness Tolerance	± 10%
Poly-type	4H
Dopant	N-type
Epi Layer
Dopant	Nitrogen
Thickness	11 μm
Thickness Tolerance	± 8%
Thickness Uniformity	σ/mean ≤ 4%
Doping Level	8.2E+15 cm^-3
Doping Tolerance	± 12%
Doping Uniformity	σ/mean ≤ 6%
Epi Defects
Total Killer Defects	≤2 /cm²
Surface Quality
Edge Exclusion	5 mm
Scratches	≤ 1 × wafer diameter cumulative length
Surface Roughness	Ra ≤ 0.5 nm

*N-type epi layers are usually preceded by an n-type, 1E18 cm^-3, 1.0 μm buffer layer

* Please provide the desired specification for us to check if you need customization.

Customer Success Story: NASA uses custom-made SiC epitaxial wafers and SiC substrates supplied by MSE Supplies to develop high temperature and smart silicon carbide electronics and sensors.

Lear more about NASA's SiC devices built on the custom made SiC epitaxial wafers supplied by MSE Supplies. Click here.

Customization

Customized SiC epi-wafer products can be made to meet customer's requirements and specifications. Both semi-insulating and N-type SiC substrates are available. The epitaxial SiC layer can also be grown with the CVD process to be either N-type or P-type with controlled doping concentration and layer thickness. Contact us today to discuss your requirements with our scientists and engineers.