4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)
4" Silicon/Silicon Dioxide (Si/SiO2) Dry Thermal Oxide Silicon Wafer, Prime Grade
5 x 10 mm, A plane (11-20) Fe-doped semi-insulating, non-polar, free-standing Gallium Nitride (GaN)
5 x 10 mm, M plane (1-100) Fe-doped semi-insulating, non-polar, free-standing Gallium Nitride (GaN)
6 in Silicon Carbide 4H-SiC N-Type SiC Ingot
6 in Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
6 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating
6 inch N-type SiC Epitaxial Wafers on SiC Substrates
8 inch Silicon Carbide Wafers 4H-SiC N-Type
Customized GaN-on-SiC Epitaxial Wafers, 100mm and 150mm
Customized Germanium Tin (GeSn) Epitaxial Wafer On Silicon Substrate
Customized SiC Epitaxial Wafers on SiC Substrates
Customized Silicon Germanium (SiGe) Epi Wafer
GaSb Gallium Antimonide Crystal Substrates
Ge Germanium Wafers and Crystal Substrates
InAs Indium Arsenide Single Crystal
Monolayer Graphene on SiC
Monolayer Graphene on SiC - 15 mm x 15 mm
MSE PRO (001) Beta Gallium Oxide Homoepitaxial Wafer (Ga2O3-on-Ga2O3), N-type
MSE PRO 1 Cassette (qty. 25) of 100 mm N Type (P-doped) Prime Grade Silicon Wafer <100>, SSP, 1-10 ohm-cm