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GaSb Gallium Antimonide Crystal Substrates,  MSE Supplies

GaSb Gallium Antimonide Crystal Substrates

  • £9600
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Main Parameters of GaSb crystal substrates and wafers
Single crystal
Dopant
Conductivity type
Carrier concentration
cm-3
Mobility(cm2/V.s)
Dislocation density(cm-2)
GaSb
undoped,
intrinsic
P
(1-2)*10^17
600-700
<1*10^4
GaSb
Zn
P
(5-100)*10^17
200-500
<1*10^4
GaSb
Te
N
(1-20)*10^17
2000-3500
<1*10^4
dimension (mm)
Diameter 50.8x0.5mm, 10x10x0.5mm
Surface roughness
Surface roughness (Ra): <= 5A
Polishing
Single side or double side polished