Diamond Epitaxial Wafer for MOSFET

MSE Supplies offers Diamond Epitaxial Wafer with either p-type or n-type doping for various applications. It has extremely high current density and voltage compared to the widely used silicon. The devices made with diamond can operate in harsh environments like high temperature and radiation. With wafers could also easily handle higher voltage and reduce energy losses by a factor of 10 compared to silicon. It has been investigated as the potential material for the compact power converters for automobiles. It can be used in various applications, including power electronics, nuclear, spatial, quantum, etc.

Specification:

Diamond Substrate
Dimension	4 mm x 4 mm
Thickness	0.5 mm
Orientation	<100>
Type	Ib
Epi Layer 1
Thickness	~50 nm
Type	p++ conductive diamond
Epi Layer 2
Thickness	~700 nm
Type	p doped diamond

*Please note that actual products might be different from the picture.

Customization:

Customized Diamond Epitaxial Wafer can be made to meet customer's particular requirements and specifications.

References:

1. Tallaire, A., Kasu, M., Ueda, K., & Makimoto, T. (2008). Origin of growth defects in CVD diamond epitaxial films. Diamond and Related Materials, 17(1), 60-65.

2. Kamo, M., Yurimoto, H., & Sato, Y. (1988). Epitaxial growth of diamond on diamond substrate by plasma assisted CVD. Applied Surface Science, 33, 553-560.