Germanium Antimony Telluride Sputtering Targets Ge₃Sb₂Te₆ are available in various sizes from 2 inch to 4 inch diameter. Germanium Antimony Telluride Sputtering Targets Ge₂Sb₂Te₅ are also available.

Typical purity: 99.99%

The electrical resistivity of this material is 0.2 mOhm-cm and can be used for DC sputtering.

GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written and direct overwrite capability up to 106 cycles. It is suitable for land-groove recording formats. It is often used in rewritable DVDs. New phase-change memories are possible using n-doped GeSbTe semiconductor. The melting point of the alloy is about 600°C (900 K) and the crystallization temperature is between 100 and 150°C.

To add a Cu Backing Plate with Indium Bonding for Sputtering Targets

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MSE PRO Germanium Antimony Telluride Sputtering Targets Ge₃Sb₂Te₆