Gallium Nitride on Silicon Carbide Epitaxial Wafers

Customized GaN-on-SiC epitaxial wafers are available from MSE Supplies. Please contact us for a quote for customized GaN on SiC epi-wafers.

100mm or 150mm GaN Epi-wafers on SiC substrates (both N type and Semi-Insulating type are available). Our GaN-on-SiC wafers are grown by the MOCVD process using AIXTRON and Veeco equipment. Custom-made wafers in 4 inch and 6 inch sizes are available. Our GaN epi-wafers have been proven for high performance DC/RF applications.

An example of GaN-on-SiC wafer epitaxial layer structure

In-situ SiN (optional)	Optional in-situ nitride available upon request
GaN cap
AlGaN Barrier	Barrier customized based on applications
AlN Spacer	High -uniformity spacer for mobility boost
GaN Channel
GaN:Fe Buffer	Buffer profile designed for high isolation and low RF trapping
AlN Nucleation
Semi-insulating SiC Substrate

Epi Structure	Key Specs	Characterization
Substrate thickness (μm)	500 ±25 or customized	Microsense Profilometer
Total epi thickness (micron)	0.6 ~ 2.5 or customized	PL
Dislocation density (/cm2)	≤ 108	XRD
XRD Rocking Curve	(004) ≤ 200 arc sec (102) ≤ 250 arc sec	XRD
Epi sheet resistance (Rsh)	225 ~ 450 Ω/sq or customized	Lehighton
Rsh uniformity	Rsh Stdev. ≤ 2%	Lehighton
Carrier concentration (/cm2)	0.8 ~ 1.1 X1013 or customized	Lehighton
Carrier mobility（cm2V-1s-1)	≥2100	Lehighton
Epi surface roughness (RMS)	≤ 0.5 nm	AFM
Wafer thickness (TTV)	≤ 10 μm	Microsense Profilometer
Wafer Bow & Wrap	≤ 30 μm	Microsense Profilometer
In situ Nitride	Available upon request	Available upon request

Representative device performance data using 0.45um process

Performance Target
Pinch-off Voltage (Ids=1mA/mm)	-2.7 ~ -3.3	V
Idss (Vgs=0V, Vds=10V)	700~800	mA/mm
Idmax (Vgs=1V, Vds=10V)	950~1100	mA/mm
Max. GM (Vds=10V)	~300	mS/mm
Breakdown VDG (Id=0.1mA/mm)	>200	V
Ft (Vds=50V)	>15	GHz
Rc	~0.35	Ohm.mm
Drain and gate leakage current (Vgs=- 5V, Vds=50V)	<0.01	mA/mm
Vf	1.2~1.3	V
Pulsed IV Drain Lag	>80	%

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