semiconductors

1 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate

1 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate

1.5 inch Ammonothermal Semi-insulating Free-Standing Gallium Nitride (GaN) Substrate

2 in Silicon Carbide Wafers 4H N-type or Semi-Insulating SiC Substrates

2 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate

2 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate

4 in Silicon Carbide 4H-SiC N-Type Ingot, Production Grade

4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade

4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates

4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)

4" Silicon/Silicon Dioxide (Si/SiO₂) Dry Thermal Oxide Silicon Wafer, Prime Grade

5 x 10 mm, A plane (11-20) Fe-doped semi-insulating, non-polar, free-standing Gallium Nitride (GaN)

5 x 10 mm, M plane (1-100) Fe-doped semi-insulating, non-polar, free-standing Gallium Nitride (GaN)

6 in Silicon Carbide 4H-SiC N-Type SiC Ingot

6 in Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade

6 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating

6 inch N-type SiC Epitaxial Wafers on SiC Substrates

8 inch Silicon Carbide Wafers 4H-SiC N-Type

Boron Carbide Powder

Cadmium Zinc Telluride (CdZnTe/CZT) Wafer