4 inch diameter Silicon Carbide (SiC) Crystal Substrate, SiC Wafers Specifications

Grade		Zero MPD Grade	Production Grade	Research Grade	Dummy Grade
Diameter		100.0 mm +/- 0.5 mm
Thickness		500 um +/- 25 um (semi-insulating type), 350 um +/- 25 um (N type)
Wafer Orientation		On axis: <0001> +/- 0.5 deg for 4H-SI Off axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N
Micropipe Density (MPD)		1 cm^-2	5 cm^-2	15 cm^-2	30 cm^-2
Electrical Resistivity (Ohm-cm)	4H-N	0.015~0.028
	4H-SI	>1E5
Doping Concentration		N-type: ~ 1E18/cm3 SI-type (V-doped): ~ 5E18/cm3
Primary Flat		{10-10} +/- 5.0 deg
Primary Flat Length		32.5 mm +/- 2.0 mm
Secondary Flat Length		18.0 mm +/- 2.0 mm
Secondary Flat Orientation		Silicon face up: 90 deg CW from Primary flat +/- 5.0 deg
Edge exclusion		3 mm
LTV/TTV /Bow /Warp		10um /15um /25um /40um
Surface Roughness		Optical Polish Ra < 1 nm on the C face
		CMP Ra < 0.5 nm on the Si face
Cracks inspected by high intensity light		None	None	1 allowed, 1 mm	1 allowed, 2 mm
Hex Plates inspected by high intensity light*		Cumulative area 1 %	Cumulative area 1 %	Cumulative area 1 %	Cumulative area 3 %
Polytype Areas inspected by high intensity light*		None	None	Cumulative area 2%	Cumulative area 5%
Scratches inspected by high intensity light**		3 scratches to 1 x wafer diameter Cumulative length	3 scratches to 1 x wafer diameter Cumulative length	5 scratches to 1 x wafer diameter Cumulative length	5 scratches to 1 x wafer diameter Cumulative length
Edge chipping		None	None	3 allowed, 0.5 mm each	5 allowed, 1 mm each
Surface Contamination as inspected by high intensity light		None

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.

** The scratches are checked on the Si face only.

Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up.

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property	4H-SiC Single Crystal	6H-SiC Single Crystal
Lattice Parameters (Å)	a=3.076 c=10.053	a=3.073 c=15.117
Stacking Sequence	ABCB	ABCACB
Density	3.21	3.21
Mohs Hardness	~9.2	~9.2
Thermal Expansion Coefficient (CTE) (/K)	4-5 x 10^-6	4-5 x10^-6
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c ~ 9.66	c ~ 9.66
Doping Type	N-type or Semi-insulating	N-type or Semi-insulating
Thermal Conductivity (W/cm-K @298K) (N-type, 0.02 ohm-cm)	a~4.2 c~3.7
Thermal Conductivity (W/cm-K @298K) (Semi-insulating type)	a~4.9 c~3.9	a~4.6 c~3.2
Band-gap (eV)	3.23	3.02
Break-Down Electrical Field (V/cm)	3-5 x 10⁶	3-5 x 10⁶
Saturation Drift Velocity (m/s)	2.0 x 10⁵	2.0 x 10⁵
Wafer and Substrate Sizes	Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request
Product Grades	A Grade Zero micropipe density (MPD 1 cm^-2) B Grade Production grade (MPD 5 cm^-2) C Grade Research grade (MPD 15 cm^-2) D Grade ummy grade (MPD 30 cm^-2)

Price

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Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.

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