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4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates,  MSE Supplies

4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates

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4 inch diameter Silicon Carbide (SiC) Crystal Substrate, SiC Wafers Specifications

Grade

Zero MPD Grade

Production Grade

Research Grade

Dummy Grade

Diameter

100.0 mm +/- 0.5 mm

Thickness

500 um +/- 25 um (semi-insulating type), 350 um +/- 25 um (N type)

Wafer Orientation

On axis: <0001> +/- 0.5 deg for 4H-SI

Off axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N

Micropipe Density (MPD)

1 cm-2

5 cm-2

15 cm-2

30 cm-2

Electrical Resistivity

(Ohm-cm)

4H-N

0.015~0.028

4H-SI

>1E7

>1E5

Doping Concentration

N-type: ~ 1E18/cm3

SI-type (V-doped): ~ 5E18/cm3

Primary Flat {10-10} +/- 5.0 deg

Primary Flat Length

32.5 mm +/- 2.0 mm

Secondary Flat Length

18.0 mm +/- 2.0 mm

Secondary Flat Orientation

Silicon face up: 90 deg CW from Prime flat +/- 5.0 deg

Edge exclusion

2 mm

LTV/TTV /Bow /Warp

4um /10um /25um /35um (Zero MPD grade, Production grade and Research grade)

10um /15um /25um /40um (Dummy grade)

Surface Roughness

Optical Polish Ra 1 nm on the C face

CMP Ra 0.5 nm on the Si face

Cracks inspected by high intensity light

None

None

1 allowed, 1 mm

1 allowed, 2 mm

Hex Plates inspected by high intensity light*

Cumulative area 1 %

Cumulative area 1 %

Cumulative area 1 %

Cumulative area 3 %

Polytype Areas inspected by high intensity light*

None

None

Cumulative area 2%

Cumulative area 5%

Scratches inspected by high intensity light**

3 scratches to 1 x wafer diameter Cumulative length

3 scratches to 1 x wafer diameter Cumulative length

5 scratches to 1 x wafer diameter Cumulative length

5 scratches to 1 x wafer diameter Cumulative length

Edge chipping

None

None

3 allowed, 0.5 mm each

5 allowed, 1 mm each

Surface Contamination as inspected by high intensity light

None

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.

** The scratches are checked on the Si face only.

Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up. 

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10-6

4-5 x10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

 

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5 x 106

3-5 x 106

Saturation Drift Velocity (m/s)

2.0 x 105

2.0 x 105

Wafer and Substrate Sizes

Wafers: 2, 3, 4, 6 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

Product Grades

A Grade Zero micropipe density (MPD 1 cm-2)

B Grade Production grade (MPD 5 cm-2)

C Grade Research grade (MPD 15 cm-2)

D Grade ummy grade (MPD 30 cm-2)

 

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.


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