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Laser Diode Grade 2 inch Fe-doped Semi-insulating Gallium Nitride Single Crystal C plane (0001), MSE Supplies

MSE PRO Production Grade 4 inch Carbon-doped Semi-insulating Gallium Nitride Single Crystal

  • $ 3,95000

MSE PRO™ Production Grade 4 inch Carbon-doped Semi-insulating Gallium Nitride Single Crystal

MSE Supplies offers high quality Production Grade 4 inch C-doped Semi-insulating Gallium Nitride Single Crystal. It has low dislocation density (on the order of 105 /cm2) and uniform surface with no periodic defects. These high quality GaN crystals have an usable area of more than 90%. Customers from all over the world have trusted MSE Supplies as their preferred supplier of GaN crystal substrates. These GaN free standing is widely used for laser diodes, power electronics, RF devices, etc.

Specification:
  • Product SKU#: WA0262
  • Dimension: 4 inch, or 100 mm ± 0.3 mm
  • Thickness: 450 ± 30 um
  • Conductivity type: Semi-insulating
  • Dopant: Carbon Doping
  • Usable area: ≥ 90 %
  • Orientation: C-plane (0001) off angle toward M-axis 0.5 deg ± 0.15 deg
  • Total Thickness Variation (TTV): ≤ 30 um
  • Bow: ± 30 um
  • Resistivity (300K): > 1E8 Ohm-cm
  • FWHM (002): < 100 arcsec
  • FWHM (102): < 100 arcsec
  • Primary Flat Orientation: M-plane (10-10) ± 2 deg
  • Primary Flat Length: 32 ± 1 mm
  • Secondary Flat Orientation: Ga face, 90° clockwise from primary flat orientation flat plane
  • Secondary Flat Length: 18 ± 1 mm
  • Polishing: Single side polished, Front surface: Ra < 0.5 nm; double side polished available per request
  • Package: packaged in a class 100 clean room environment, in single wafer container

Please contact us for bulk order or customization. 

Related Reference

1. Incorporation of carbon in free-standing HVPE-grown GaN substrates. Journal of Electronic Materials 48 (2019): 2226-2232.

2. The pyroelectric coefficient of free standing GaN grown by HVPE. Applied Physics Letters 109, no. 14 (2016).

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