Undoped, N-type free-standing GaN substrate, size 10 mm x 10.5 mm, Single side polish or double side polish

MSE Supplies offers premium quality GaN crystal substrates with low dislocation density (on the order of 10⁵ /cm²) and uniform surface with no periodic defects. These high quality GaN crystals have an usable area of more than 90%.

We offer the best price on the market for high quality GaN crystal substrates. Customers from all over the world have trusted MSE Supplies as their preferred supplier of GaN crystal substrates.

Product #: WA0218 (Single Side Polished) / WA0214 (Double Side Polished)

Conductivity type: N-Type
Dimension: 10.0 mm x 10.5 mm
Thickness: 350 +/- 25 um
Useable area: >90%
Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg +/- 0.15 deg
Total Thickness Variation: <15 um
Bow: <20 um
Resistivity (300K): < 0.5 Ohm-cm
Carrier Concentration: 1e17cm^-3
Mobility: 500 cm²/(V.s)
Dislocation Density: 5x10⁵ cm^-2~ 3x10⁶ cm^-2
Polishing: Polished surface: Ra <0.5 nm, Epi Ready.
Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related References:

Characterization of GaN single crystals by defect selective etching

https://doi.org/10.1002/pssc.200306248

Carrier transport in GaN single crystals and radiation detectors investigated by thermally stimulated spectroscopy

http://www.wat.edu.pl/review/optor/12(4)399.PDF

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