MSE PRO 10 mm x 10.5 mm, Undoped, N-type, Gallium Nitride Single Crystal Substrate C plane (0001)
MSE Supplies offers premium quality GaN crystal substrates with low dislocation density (on the order of 105 /cm2) and uniform surface with no periodic defects. These high quality GaN crystals have an usable area of more than 90%.
We offer the best price on the market for high quality GaN crystal substrates. Customers from all over the world have trusted MSE Supplies as their preferred supplier of GaN crystal substrates.
Product #: WA0218 (Single Side Polished) / WA0214 (Double Side Polished)
- Conductivity type: N-Type
- Dimension: 10.0 mm x 10.5 mm
- Thickness: 350 +/- 25 um
- Useable area: >90%
- Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg +/- 0.15 deg
- Total Thickness Variation: <15 um
- Bow: <20 um
- Resistivity (300K): < 0.5 Ohm-cm
- Carrier Concentration: 1e17cm-3
- Mobility: 500 cm2/(V.s)
- Dislocation Density: 5x105 cm-2 ~ 3x106 cm-2
- Polishing: Polished surface: Ra <0.5 nm, Epi Ready.
- Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.
Characterization of GaN single crystals by defect selective etching
Carrier transport in GaN single crystals and radiation detectors investigated by thermally stimulated spectroscopy
We Also Recommend
1 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate
1 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate
2 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate