Silicon Germanium (SiGe) Epitaxial Wafer - MSE Supplies LLC

Silicon Germanium (SiGe) Epitaxial Wafer

  • $ 000

Silicon Germanium (SiGe) alloys can be grown at mostly any composition on silicon (Si) substrate. It is discovered by researcher at IBM in the 1970s and 1980s and soon become one of the most important discovery in semiconductor. This technology enabling complex strain engineering possibilities which can enhance properties of the semiconductor. Often times, low Germanium (Ge) content alloys (<50%) are grown directly on Si substrates while higher composition Ge alloys (>50%) are grown on relaxed Ge buffers. Compare to silicon, it not only increase the frequency and oscillating capabilities of devices, but also enhance the power consumption and performance. These advantages make it a cost-effective and smaller option. This technology often used in high-speed integrated circuits, wireless communication and photonic applications. 


Substrate Silicon Wafer
Wafer Size 4 inch / 6 inch / 8 inch
Si Content X% (X=1~100)
Ge Content (1-X)% 
SixGe1-x Epi Layer fully strained / partially / fully relaxed

*Please note that actual products might be different from the picture.


1. Thermal conductivity of epitaxial layers of dilute SiGe alloys. Physical Review B 71, no. 23 (2005): 235202.

2. Lattice contraction with boron doping in fully strained SiGe epitaxial layers. Japanese Journal of Applied Physics 57, no. 6 (2018): 065504.

MSE Supplies offers epitaxy services on various substrate. Please contact us if you need customized specification.