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Silicon Carbide Sputtering Target SiC,  MSE Supplies

Silicon Carbide Sputtering Target SiC

  • $ 45360


Specifications

To add a Cu Backing Plate with Indium Bonding for Sputtering Targets  

If you need customized polycrystalline silicon carbide (SiC) sintered parts, please contact MSE Supplies for a quote (sales@msesupplies.com). We can make precision SiC ceramic parts with drawings provided by our customers. 

Material Type Silicon Carbide
Symbol SiC
Melting Point (°C) ~2,700
Theoretical Density (g/cc) 3.22
Z Ratio **1.00
Sputter RF
Max Power Density
(Watts/Square Inch)
30
Type of Bond Indium, Elastomer
Comments Sputtering preferred.
Purity 99.5%