Silicon Carbide Sputtering Target SiC
Specifications
| Material Type | Silicon Carbide |
| Symbol | SiC |
| Melting Point (°C) | ~2,700 |
| Theoretical Density (g/cc) | 3.22 |
| Z Ratio | **1.00 |
| Sputter | RF |
| Max Power Density (Watts/Square Inch) |
30* |
| Type of Bond | Indium, Elastomer |
| Comments | Sputtering preferred. |
| Purity | 99.5% |
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