
Silicon Carbide Sputtering Target SiC
Specifications
To add a Cu Backing Plate with Indium Bonding for Sputtering Targets
Material Type | Silicon Carbide |
Symbol | SiC |
Melting Point (°C) | ~2,700 |
Theoretical Density (g/cc) | 3.22 |
Z Ratio | **1.00 |
Sputter | RF |
Max Power Density (Watts/Square Inch) |
30* |
Type of Bond | Indium, Elastomer |
Comments | Sputtering preferred. |
Purity | 99.5% |