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Silicon Carbide Sputtering Target SiC

Silicon Carbide Sputtering Target SiC

  • $ 40600


Specifications

Material Type Silicon Carbide
Symbol SiC
Melting Point (°C) ~2,700
Theoretical Density (g/cc) 3.22
Z Ratio **1.00
Sputter RF
Max Power Density
(Watts/Square Inch)
30*
Type of Bond Indium, Elastomer
Comments Sputtering preferred.
Purity 99.5%

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