Silicon Carbide Sputtering Target SiC
Specifications
To add a Cu Backing Plate with Indium Bonding for Sputtering Targets 
| Material Type | Silicon Carbide |
| Symbol | SiC |
| Melting Point (°C) | ~2,700 |
| Theoretical Density (g/cc) | 3.22 |
| Z Ratio | **1.00 |
| Sputter | RF |
| Max Power Density (Watts/Square Inch) |
30* |
| Type of Bond | Indium, Elastomer |
| Comments | Sputtering preferred. |
| Purity | 99.5% |