Silicon Carbide Crystal Ingots N-type or Semi-insulating
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Silicon Carbide Crystal Ingots N-type or Semi-insulating, available sizes: 2 inch, 4 inch, 6 inch
Please contact us for a quote.
PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
|
Property |
4H-SiC Single Crystal |
6H-SiC Single Crystal |
|
Lattice Parameters (Å) |
a=3.076 c=10.053 |
a=3.073 c=15.117 |
|
Stacking Sequence |
ABCB |
ABCACB |
|
Density |
3.21 |
3.21 |
|
Mohs Hardness |
~9.2 |
~9.2 |
|
Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
4-5 x 10-6 |
|
Refraction Index @750nm |
no = 2.61 ne = 2.66 |
no = 2.60 ne = 2.65 |
|
Dielectric Constant |
c ~ 9.66 |
c ~ 9.66 |
|
Doping Type |
N-type or Semi-insulating |
N-type or Semi-insulating |
|
Thermal Conductivity (W/cm-K @298K) (N-type, 0.02 ohm-cm) |
a~4.2 c~3.7 |
|
|
Thermal Conductivity (W/cm-K @298K) (Semi-insulating type) |
a~4.9 c~3.9
|
a~4.6 c~3.2
|
|
Band-gap (eV) |
3.23 |
3.02 |
|
Break-Down Electrical Field (V/cm) |
3-5 x 106 |
3-5 x 106 |
|
Saturation Drift Velocity (m/s) |
2.0 x 105 |
2.0 x 105 |
|
Ingot Sizes |
Diameter: 2, 3, 4, 6 inch Thickness: 5-10 mm or 10-15 mm other sizes are available and can be custom-made upon request |
|
|
Product Grades |
A Grade Zero micropipe density (MPD 1 cm-2) - not available as ingots B Grade Production grade (MPD 5 cm-2) - not available as ingots C Grade Research grade (MPD 10 cm-2) D Grade Dummy grade (MPD 15 cm-2) |
|
Price
MSE Supplies offers the best price on the market for high quality SiC ingots, wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.