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Silicon Carbide Crystal Ingots N-type or Semi-insulating

To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.

 PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 ×10-6

4-5 ×10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm·K @298K)

(N-type, 0.02 ohm·cm)

a~4.2

c~3.7

  

Thermal Conductivity (W/cm·K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5×106

3-5×106

Saturation Drift Velocity (m/s)

2.0 x 105

2.0 x 105

Ingot Size

2”, 3”, 4”, 6” ingots are available

Product Grades

A Grade – Zero micropipe density (MPD ≤ 1 cm-2)

B Grade – Production grade (MPD ≤ 5 cm-2)

C Grade – Research grade (MPD ≤ 15 cm-2)

D Grade – Dummy grade (MPD ≤ 50 cm-2)

 

Price:

MSE Supplies offers the best price on the market for high quality silicon carbide wafers and SiC crystal ingots up to six (6) inch diameter.  Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications.  CONTACT US today to get your quote. 

Customization:

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. 

 

 


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