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Customized SiC Epitaxial Wafers on SiC Substrates

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Customized silicon carbide SiC epitaxial wafers can be provided by MSE Supplies to meet your specific project requirements. Both semi-insulating and N-type SiC substrates are available. The epitaxial SiC layer can also be grown with the CVD process to be either N-type or P-type with controlled doping concentration and layer thickness.  Wafer characterization reports based on advanced analytical methods, such as SIMS and XRD, are available to guarantee the quality of our SiC epi wafers.  

SiC epitaxial wafers have the advantages of operating under high-voltage, high electric current, and at high temperatures compared to semiconductor devices based on silicon. These unique features of SiC epitaxial wafers lead to the miniaturization of devices, enabling smaller and lighter power control modules to be made. 

Customer Success Story: NASA uses custom-made SiC epitaxial wafers and SiC substrates supplied by MSE Supplies to develop high tempearture and smart silicon carbide electronics and sensors.

Lear more about NASA's SiC devices built on the custom made SiC epitaxial wafers supplied by MSE Supplies. Click here. 

PROPERTIES OF 4H SILICON CARBIDE SUBSTRATES

Property

4H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

Stacking Sequence

ABCB

Density

3.21

Mohs Hardness

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 ×10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

Dielectric Constant

c ~ 9.66

Doping Type

N-type or Semi-insulating

Thermal Conductivity (W/cm·K @298K)

(N-type, 0.02 ohm·cm)

a~4.2

c~3.7

Thermal Conductivity (W/cm·K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

Band-gap (eV)

3.23

Break-Down Electrical Field (V/cm)

3-5×106

Saturation Drift Velocity (m/s)

2.0 x 105

Wafer and Substrate Sizes

Wafers: 2”, 3”, 4”, 6”; small substrates: 10x3, 10x5, 10x10, 15x15, 20x15, 20x20 mm, other sizes are available and can be custom-made upon request

Product Grades

A Grade – Zero micropipe density (MPD ≤ 1 cm-2)

B Grade – Production grade (MPD ≤ 5 cm-2)

C Grade – Research grade (MPD ≤ 15 cm-2)

D Grade – Dummy grade (MPD ≤ 50 cm-2)

 

Price

MSE Supplies offers the best price on the market for high quality SiC epitaxial wafers up to six (6) inch diameter.  Our price matching policy guarantees you the best price for the SiC epi wafers with comparable specifications.  CONTACT US today to get your quote. 

Customization

Customized SiC products can be made to meet customer's requirements and specifications. Both semi-insulating and N-type SiC substrates are available. The epitaxial SiC layer can also be grown with the CVD process to be either N-type or P-type with controlled doping concentration and layer thickness. Contact us today to discuss your requirements with our scientists and engineers. 


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