5 x 10 mm, Fe-doped, semi-insulating, non-polar, free-standing Gallium Nitride (GaN), A plane (11-20)
MSE Supplies offers premium quality GaN crystal substrates with low dislocation density (on the order of 105 /cm2) and uniform surface with no periodic defects. These high quality GaN crystals have an usable area of more than 90%.
We sell directly from the factory, and therefore can offer the best price on the market for high quality GaN crystal substrates. Customers from all over the world have trusted MSE Supplies as their preferred supplier of GaN crystal substrates.
- Conductivity type: semi-insulating
- Dimension: 5.0 mm x 10 mm ± 0.2 mm
- Thickness: 350 ± 25 μm
- Usable surface area: > 90% substrate surface
- Orientation: A plane (11-20) off angle toward C-Axis -1°± 0.2°
- Total Thickness Variation: <10 μm
- Bow: <10 μm
- Resistivity (300K): > 10^6 Ω·cm
- Dislocation Density: < 5x10^5 cm^-2
- Polishing: front surface Ra < 0.2 nm. Epi-ready polished. Back surface: fine ground.
- Package: packaged in a class 100 clean room environment in single wafer containers under a nitrogen atmosphere.
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