Menu
Cart

10 mm x 10 mm, Undoped, N-type, Gallium Nitride Single Crystal Substrate C plane (0001)

  • 24800


Undoped, N-type free-standing GaN substrate, size 10 mm x 10.5 mm, Single side polish

MSE Supplies offers premium quality GaN crystal substrates with low dislocation density (on the order of 105 /cm2) and uniform surface with no periodic defects. These high quality GaN crystals have an usable area of more than 90%.  

We sell directly from the factory, and therefore can offer the best price on the market for high quality GaN crystal substrates.  Customers from all over the world have trusted MSE Supplies as their preferred supplier of GaN crystal substrates.  

Product #: GaN-U-N-C-10x10

  • Conductivity type: N-Type
  • Dimension: 10.0 mm x 10.5 mm
  • Thickness: 350 ± 25 μ
  • Useable area: >90%
  • Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35°± 0.15°
  • Total Thickness Variation: <15 μm
  • Bow: <20 μm
  • Resistivity (300K): < 0.5 Ω·cm
  • Carrier Concentration:1e17cm-3
  • Mobility: 500 cm2/V*s
  • Dislocation Density: 5x105 cm-2 ~ 3x106 cm-2
  • Polishing: Front surface: Ra <0.2 nm, Epi Ready. Double-side polished wafers are available at extra cost.
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere. 

 Related References: 

1. High-nitrogen-pressure growth of GaN single crystals: doping and physical properties

http://iopscience.iop.org/article/10.1088/0953-8984/13/40/302/meta

2. Characterization of GaN single crystals by defect‐selective etching

https://doi.org/10.1002/pssc.200306248

3. Carrier transport in GaN single crystals and radiation detectors investigated by thermally stimulated spectroscopy

http://www.wat.edu.pl/review/optor/12(4)399.PDF

 


We Also Recommend