MSE PRO Production Grade 2 inch Si-Doped N-type Gallium Nitride Single Crystal C plane (0001)

• Dimension: 2" diameter
• Thickness: 400 +/- 30 um
• Usable area: >90%
• Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.55 deg +/- 0.15 deg
• Total Thickness Variation: < 15 um
• Bow: < 20 um
• Resistivity (300K): < 0.05 Ohm.cm
• Dislocation Density: < 3 x 10⁶ cm^-2
• Polishing: SSP, Front surface: Ra < 0.3 nm, epi-ready polished
• Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free¨«standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES

https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf