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Laser Diode Grade 2 inch Si-Doped N-type Gallium Nitride Single Crystal C plane (0001),  MSE Supplies

MSE PRO Production Grade 2 inch Si-Doped N-type Gallium Nitride Single Crystal C plane (0001)

SKU: WA0224

  • $ 3,89595
  • Save $ 46800

Bulk orders? Please contact us for Bulk Quotation.

Qty (Each) Price (Each)
1 - 1 $ 3,895.95
2 - 10 $ 3,795.95
11 - 11+ $ 3,695.95

Production Grade Free-standing (single crystal) GaN substrate, C plane (0001), size 2 inch diameter
Conductivity type: N-type Si-doped
SKU# : WA0224
  • Dimension: 2" diameter
  • Thickness: 400 +/- 30 um
  • Usable area: >90%
  • Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.55 deg +/- 0.15 deg
  • Total Thickness Variation: < 15 um
  • Bow: < 20 um
  • Resistivity (300K): < 0.05 Ohm.cm
  • Dislocation Density: < 3 x 106 cm-2
  • Polishing: SSP, Front surface: Ra < 0.3 nm, epi-ready polished
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free¨«standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES

https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf