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MSE PRO Boron Doped Diamond Electrode on Polycrystalline Silicon Substrate (BDD/Poly-Si Electrode) - MSE Supplies LLC

MSE PRO Boron Doped Diamond Electrode on Polycrystalline Silicon Substrate (BDD/Poly-Si Electrode)

  • $ 1,19900


MSE PRO™ Boron Doped Diamond Electrode on Polycrystalline Silicon Substrate (BDD/Poly-Si Electrode)

MSE Supplies offers high quality Boron Doped Diamond Electrode on Polycrystalline Silicon Substrate (BDD/Poly-Si Electrode). It is recognized as being superior to other electrode materials due to excellent electrochemical properties. Main advantages include: (i) outstanding chemical and dimensional stability, (ii) exceptionally low background current, (iii) an extremely wide potential window for water electrolysis, (iv) a broad electromagnetic transparency window of thin films ranging from the UV-Vis region to the far-infrared region, (v) low magnetic susceptibility compared to other electrode materials, and (vi) excellent biocompatibility (sp3 hybridized structure). Since the substrate is silicon, it can be integrated with other silicon-based electronic devices and circuits. It is advantageous for applications where silicon compatibility and integration are essential. It is widely used for environmental protection industry, electronic manufacturing, grinding, and many other applications.

Specifications:

Size (length x width x thickness) 100 mm x 100 mm x 1 mm
Substrate
Polycrystalline silicon
Substrate Surface Finish
Etched
BDD Doping Level 700~800 ppm
BDD Resistivity 100 mΩ.cm
BDD Thickness 2.5 ± 0.5 um
BDD Coating Side Single side (WA5403) ; Double side (WA5404)

*Other doping levels are available upon request.