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4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates,  MSE Supplies

MSE PRO As-cut Silicon Carbide Wafers 4H-SiC Substrates N-Type

  • $ 34500


MSE PRO As-cut Silicon Carbide Wafers 4H-SiC Substrates N-Type

Grade

Production Grade

Dummy Grade

Diameter

6" or 4"

Thickness

450 um +/- 25 um

Wafer Orientation

Off axis: 4.0 deg toward <11-20> +/-0.5 deg

Micropipe Density (MPD)

≤5 cm-2

≤50 cm-2

Primary Flat {10-10} +/- 5.0 deg

Edge exclusion

3 mm

Cracks inspected by high intensity light

None

10 allowed, 2 mm

Hex Plates inspected by high intensity light*

Cumulative area 1 %

Cumulative area 3 %

Polytype Areas inspected by high intensity light*

None

Cumulative area 5%

Edge chipping

1 allowed, 1 mm each

5 allowed, 1 mm each

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.

Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up. 

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10-6

4-5 x10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

 

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5 x 106

3-5 x 106

Saturation Drift Velocity (m/s)

2.0 x 105

2.0 x 105

Wafer and Substrate Sizes

Wafers:4, 6 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

 

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.