MSE PRO AlGaN/GaN HEMT on 4 inch Sapphire Wafer
MSE PRO™ AlGaN/GaN HEMT transistors (high electron mobility transistors) grown on sapphire substrate
Other layer structures can be custom made upon request. Please contact us for a quote.
SKU | WA0285 | |
Substrate | Type | Flat Sapphire |
Polishing |
Single Side Polished (standard) Double Sides Polished (available upon request) |
|
Dimension | 100+/-0.2 mm (4 inch) | |
Orientation | C plane (0001) off angle toward M-axis 0.2+/-0.1 deg | |
Thickness | 660+/-25 um | |
Epilayer | Structure | ~2nm GaN/~25nm AlGaN/~1nm AlN/~300nm GaN/~2um C-doped GaN/~20nm AlN buffer/ Sapphire |
Roughness(Ra) | ~0.5 nm | |
Dislocation density | <1x109 cm-2 | |
Rs | <400ohm/sq | |
2DEG Ns | >8x1012 cm-2 | |
2DEG Mobility | >1500 cm2/Vs | |
Usable area | >90% |