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AlGaN/GaN HEMT on 2 inch Si Wafer (GaN/Si), MSE Supplies

MSE PRO AlGaN/GaN HEMT on 2 inch Si Wafer (GaN/Si)

  • $ 63500

AlGaN/GaN high electron mobility transistors (HEMTs) grown on 2 inch silicon substrate

HEMT structure for 650 V power electronics applications

Special layer structures can be custom made upon request. Please contact us for a quote. D-mode HEMT, E-mode HEMT, RF HEMT wafers are available upon request.

GaN HEMT on silicon layer structure

  • Product SKU# WA0232
  • Thickness of GaN Cap Layer: 3 nm
  • AlGaN compostion (%Al): 26% Al
  • AlGaN barrier layer thickness (nm): 25 nm
  • AlN inter-layer thickness: 1 nm
  • Thickness of GaN (um): 2 um
  • Thickness of buffer layer (um): ~ 1 um
  • Thickness of Si (111) substrate (um): 1000 um (or 675 um or 1500 um for 2 inch Si substrate)
  • Sheet resistance (Ohms/sq): <420
  • Electron mobility: >1300 cm2/V-sec for Si substrate
  • Sheet carrier concentration (/cm): ~ 1E13
  • Electrical breakdown voltage: >1000V
  • Bow: <60 um
  • RMS roughness (AFM): < 0.5 nm (5 um x 5 um area)
  • 2 um GaN layer Resistivity: > 1E5 Ohm.cm

    Related Publications

    1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs B.M. Green; K.K. Chu; E.M. Chumbes; J.A. Smart; J.R. Shealy; L.F. Eastman
    2. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard; K. Doverspike; W.L. Pribble; S.T. Allen; J.W. Palmour; L.T. Kehias; T.J. Jenkins
    3. Trapping effects in GaN and SiC microwave FETs S.C. Binari; P.B. Klein; T.E. Kazior
    4. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrate Slant Field Plates Y. Dora; A. Chakraborty; L. Mccarthy; S. Keller; S.P. Denbaars; U.K. Mishra
    5. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Huili Xing; Y. Dora; A. Chini; S. Heikman; S. Keller; U.K. Mishra
    6. High breakdown GaN HEMT with overlapping gate structure N.-Q. Zhang; S. Keller; G. Parish; S. Heikman; S.P. DenBaars; U.K. Mishra
    7. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs V. Tilak; B. Green; V. Kaper; H. Kim; T. Prunty; J. Smart; J. Shealy; L. Eastman
    8. Measured microwave power performance of AlGaN/GaN MODFET Y.-F. Wu; B.P. Keller; S. Keller; D. Kapolnek; S.P. Denbaars; U.K. Mishra
    9. CW operation of short-channel GAN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz M. Asif Khan; Q. Chen; M.S. Shur; B.T. Dermott; J.A. Higgins; J. Burm; W.J. Schaff; L.F. Eastman
    10. AlN/GaN insulated -Gate HFETs Using Cat-CVD SiN M. Higashiwaki; T. Mimura; T. Matsui
    11. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate D. Ducatteau; A. Minko; V. Hoel; E. Morvan; E. Delos; B. Grimbert; H. Lahreche; P. Bove; C. Gaquiere; J.C. De Jaeger; S. Delage
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