AlGaN/GaN high electron mobility transistors (HEMTs) grown on 2 inch silicon substrate
HEMT structure for 650 V power electronics applications
Special layer structures can be custom made upon request. Please contact us for a quote. D-mode HEMT, E-mode HEMT, RF HEMT wafers are available upon request.

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Product SKU# WA0232
- Thickness of GaN Cap Layer: 3 nm
- AlGaN compostion (%Al): 26% Al
- AlGaN barrier layer thickness (nm): 25 nm
- AlN inter-layer thickness: 1 nm
- Thickness of GaN (um): 2 um
- Thickness of buffer layer (um): ~ 1 um
- Thickness of Si (111) substrate (um): 1000 um (or 675 um or 1500 um for 2 inch Si substrate)
- Sheet resistance (Ohms/sq): <420
- Electron mobility: >1300 cm2/V-sec for Si substrate
- Sheet carrier concentration (/cm): ~ 1E13
- Electrical breakdown voltage: >1000V
- Bow: <60 um
- RMS roughness (AFM): < 0.5 nm (5 um x 5 um area)
- 2 um GaN layer Resistivity: > 1E5 Ohm.cm
Related Publications
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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs B.M. Green; K.K. Chu; E.M. Chumbes; J.A. Smart; J.R. Shealy; L.F. Eastman
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard; K. Doverspike; W.L. Pribble; S.T. Allen; J.W. Palmour; L.T. Kehias; T.J. Jenkins
- Trapping effects in GaN and SiC microwave FETs S.C. Binari; P.B. Klein; T.E. Kazior
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrate Slant Field Plates Y. Dora; A. Chakraborty; L. Mccarthy; S. Keller; S.P. Denbaars; U.K. Mishra
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Huili Xing; Y. Dora; A. Chini; S. Heikman; S. Keller; U.K. Mishra
- High breakdown GaN HEMT with overlapping gate structure N.-Q. Zhang; S. Keller; G. Parish; S. Heikman; S.P. DenBaars; U.K. Mishra
- Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs V. Tilak; B. Green; V. Kaper; H. Kim; T. Prunty; J. Smart; J. Shealy; L. Eastman
- Measured microwave power performance of AlGaN/GaN MODFET Y.-F. Wu; B.P. Keller; S. Keller; D. Kapolnek; S.P. Denbaars; U.K. Mishra
- CW operation of short-channel GAN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz M. Asif Khan; Q. Chen; M.S. Shur; B.T. Dermott; J.A. Higgins; J. Burm; W.J. Schaff; L.F. Eastman
- AlN/GaN insulated -Gate HFETs Using Cat-CVD SiN M. Higashiwaki; T. Mimura; T. Matsui
- Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate D. Ducatteau; A. Minko; V. Hoel; E. Morvan; E. Delos; B. Grimbert; H. Lahreche; P. Bove; C. Gaquiere; J.C. De Jaeger; S. Delage