MSE PRO 4 inch Tantalum (Ta) Thin Film on Silicon Wafer

$ 269⁹⁵
Save $ 33⁰⁰

MSE PRO™ 4 inch Tantalum Thin Film on Silicon Wafer

Tantalum (Ta) and Tantalum nitride (TaN) have been extensively used for microelectronic industry, as diffusion barriers and thin film resistors. Both materials have potential as coatings for tribological and corrosion resistance applications. Ta is well known by its excellent thermal stability and high conductivity. It has been used as a biomaterial for a long time due to its excellent biocompatibility, corrosion resistance and stability.

Specification:

Size	4 inch
Substrate	Silicon wafer
Substrate Thickness	775 um +/- 25um
Substrate Doping Type	P-type/ Boron-doped
Substrate Orientation	<100>
Substrate Resistivity	1-100 ohm-cm
Deposition Method	PVD
Defect	<100 pcs @ >200nm
Substrate Surface	Single side polished
Thin Film Material	Tantalum (Ta)
Thin Film Thickness	50 nm - 300nm customizable

Reference:

[1] A. Jara, B. Fraisse, V. Flaud, N. Fréty, G. Gonzalez, Thin film deposition of Ta, TaN and Ta/TaN bi-layer on Ti and SS316-LVM substrates by RF sputtering, Surface and Coatings Technology, Volume 309, 2017, Pages 887-896.

[2] S. M. Rossnagel; Characteristics of ultrathin Ta and TaN films. J. Vac. Sci. Technol. B 1 November 2002; 20 (6): 2328–2336.