MSE PRO 2 inch Aluminum Nitride (AlN) Single Crystal Substrate
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MSE PRO™ 2 inch Aluminum Nitride (AlN) Single Crystal Substrate
MSE supplies offers high quality 2 inch Aluminum Nitride (AlN) Single Crystal Substrate. It has one of the widest bandgap energy among group Ⅲ-Ⅴ semiconductors. It also present several other superior properties including high thermal conductivity, great chemical resistance, high electrical insulation, structural compatibility with III-nitrides (good for epitaxial growth), etc. It is widely used for RF transistors, UV LEDs, and electronic devices.
*Please note that we will kindly ask you to fill in a declaration form according to the law.
Technical Specification:
| SKU# | WA1921 |
| Diameter | 50.8 ± 0.5 mm |
| Thickness | 400 ± 50 µm |
| Orientation |
{0001} ± 0.5°
|
|
High resolution XRD Rocking Curve, (0002) Reflection
|
≤ 500 arcsec FWHM |
| Optical Absorbance @265nm | ≤ 100 cm-1 |
| Surface Finish | Al-face: CMP N-face: Polished |
| Bow |
≤ 30 μm |
| Warp | ≤ 30 μm |
| Usable Area | ≥ 90 % |
Please contact us for customization or bulk order.