Thank you!

Your quote has been successfully submitted!

For products requiring additional information, our team will contact you within 1 business day

Failed

There was an error submitting your quote. Please try again.

MSE PRO (010) Beta Gallium Oxide Homoepitaxial Wafer, Semi-Insulating– MSE Supplies LLC

Free Shipping on MSE PRO Online Orders of $500 or More! U.S. Orders Only * Offer Excludes Hazmat Shipments *

Menu

This product has been added to the cart.

MSE PRO (010) Beta Gallium Oxide Homoepitaxial Wafer (Ga<sub>2</sub>O<sub>3</sub>-on-Ga<sub>2</sub>O<sub>3</sub>), Semi-Insulating - MSE Supplies LLC

MSE PRO (010) Beta Gallium Oxide Homoepitaxial Wafer (Ga2O3-on-Ga2O3), Semi-Insulating

SKU: WA0533

  • $ 4,50095
  • Save $ 54100


MSE PRO™ (010) Beta Gallium Oxide Homoepitaxial Wafer, Ga2O3-on-Ga2O3, Semi-Insulating

MSE Supplies offers various sizes of ß-Ga2Ohomoepitaxial wafer. It is a thin layer of gallium oxide crystal on top of the same material. It has excellent electrical and material properties including high breakdown voltage, wide bandgap, and low on resistance. It is widely used in high-performance power electronics devices for electrical vehicles, sensors, photodetectors, etc.

Specification:

      General Wafer
      SKU# WA0533
      Dimensions 15 mm x 10 mm 
      Thickness 500 ± 20 μm 
      XRD FWHM
      ≤ 150 arcsec
      Surface Roughness RMS ≤ 0.5 nm (10 μm × 10 μm)
      Epi Layer
      Material ß-Ga2O3
      Thickness 250 ± 50 nm
      Uniformity
      ≦ 10%
      Doping
      UID
      Substrate
      Material ß-Ga2O3
      Dopant Fe-doped
      Orientation (010) ± 1°
      Resistivity > 1010 ohm.cm

        Please contact us for bulk order or customized shape, size, thickness and substrate. 

        References:

        1. Recent progress in the growth of β-Ga2O3 for power electronics applications. Materials Science in Semiconductor Processing 78 (2018): 132-146.

        2. Growth and characterization of homoepitaxial β-Ga2O3 layers. Journal of Physics D: Applied Physics 53, no. 48 (2020): 484002.