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InP, Indium Phosphide Crystal Substrates - MSE Supplies

InP, Indium Phosphide Crystal Substrates

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Main Parameters
Single crystal
Dopant
Conductivity type
Carrier concentration
cm-3
Mobility(cm2/V.s)
Dislocation density(cm-2)
Standard substrate
InP
none
  
N
(0.4-2)*10^16
3500~4000
5*104
Φ2×0.35mm
Φ3×0.35mm
InP
S
N
(0.8-3)*10^18
(4-6)*10^18
2000~2400
1300~1600
3*104
2*103
Φ2×0.35mm
Φ3×0.35mm
InP
Zn
P
(0.6-2)*10^18
1200~3500
 
2*104
 
Φ2×0.35mm
Φ3×0.35mm
InP
Te
N
  107-10^8
 2000
3*104
Φ2×0.35mm
Φ3×0.35mm
Dimension(mm)
Dia50.8x0.35mm,10×10×0.35mm,  10×5×0.35mm
Surface roughness
Surface roughness(Ra):<=5A
Polishing
 One side or double side

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