High Thermal Conductivity Silicon Nitride (Si<sub>3</sub>N<sub>4</sub>) Ceramic Substrate (114.3mm x114.3 mm) - MSE Supplies LLC

High Thermal Conductivity Silicon Nitride (Si3N4) Ceramic Substrate (114.3mm x114.3 mm)

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High Thermal Conductivity Silicon Nitride (Si3N4) Ceramic Substrate (114.3mm x114.3 mm)

Silicon Nitride (Si3N4) Ceramic Substrate is mainly composed of Si3N4, which is in its most stable form. Among all the ceramic materials, Si3N4 is one of the most popular one due to its great overall properties, such as the ability to handle mechanical stress, high resistance to thermal shock, high thermal conductivity and high wear resistance. These properties allow it to withstand high dynamic stress and high temperature conditions. It is widely used as heat dissipation materials for IGBT and SiC MOSFET in in automotive, electronics, aerospace and biomedical industries.

The high thermal conductivity (>80 W/m.K) of our silicon nitride Si3N4 ceramic substrate is comparable to Maruwa's silicon nitride Si3N4 ceramic substrate. 

MSE Supplies also supply various Si3Nceramic parts. Please contact us for bulk order or customization. 


Dimension (LxW) (mm)

114.3 x 114.3 (WA2102)

Color Gray
Thickness (mm) 0.32 
Thermal Conductivity at 25°C (W/m.K) > 80 
Flexural Strength (3 point) (MPa) > 700 
Coefficient of Thermal Expansion (10-6/K)

40°C-400°C: 2.0~3.0 

40°C-800°C: 2.0~3.0 

Fracture Roughness (MPa * m1/2)  

≥ 6.5 

Breakdown Strength (kV/mm) ≥ 17 
Bulk Density (g/cm³) ≥ 3.2 
Volume Resistivity at 25°C (Ω・cm) ≥ 1014
Surface Roughness (μm) < 0.6 on both sides



1. Tailored Si3N4 ceramic substrates for CVD diamond coating. Surface engineering 19, no. 6 (2003): 410-416.

2. Excimer laser mixing of Ti layers on Si3N4 ceramic substrates. Applied physics letters 60, no. 7 (1992): 912-914.