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Graphene Field-Effect Transistors (GFETs) for Sensing Applications

  • $ 46500


Graphene Field-Effect Transistors GFET (Die size 10 mm x 10 mm) for Sensing Applications

The ME0627-GFET chip provides 36 graphene devices dispersed in a grid pattern on the chip. Thirty devices have a Hall-bar geometry and six have a 2-probe geometry. The Hall-bar devices can be used for Hall-bar measurements as well as 4-probe and 2-probe devices. There are varying graphene channel dimensions to allow investigation of geometry dependence on device properties. It has Cr/Au contacts which are inert and stable.

For sensing applications in liquid, please consider ME0628-GFET chip.  

SKU#: ME0627

Measurement Protocols and Handling Instructions

FEATURES

  • State-of-the-art GFETs utilizing high-quality graphene
  • Devices not encapsulated ready for your functionalization
  • Perfect platform device for new sensor research and development
  • 36 individual GFETs per chip
  • Mobilities typically in excess of 1000 cm2/V.s
  • Processed in Clean Room Class 1000

    APPLICATIONS

    • Graphene device research
    • Chemical sensors
    • Biological sensors (biosensors)
    • Bioelectronics
    • Magnetic sensors
    • Photodetectors

    TYPICAL SPECIFICATIONS

    Chip dimensions

    10 mm x 10 mm

    Chip thickness

    675 μm

    Number of GFETs per chip

    36

    Gate Oxide thickness

    90 nm

    Gate Oxide material

    SiO2

    Resistivity of substrate

    1-10 Ω.cm

    Metallization

    Chromium/Gold 2/50 nm

    Graphene field-effect mobility

    > 1000 cm2/V.s

    Dirac point

    < 50 V

    Yield

    > 75 %

     

    ABSOLUTE MAXIMUM RATINGS

    Maximum gate-source voltage

    ± 50 V

    Maximum temperature rating

    150 °C

    Maximum drain-source current density

    107 A.cm-2

     

    CHANNEL GEOMETRIES

    Description

    Width (µm)

    Length 1 (µm)

    Length 2 (µm)

    Quantity

    Standard

    50

    30

    50

    12

    Varying Width

    10

    30

    50

    1

    20

    1

    30

    1

    40

    1

    100

    1

    200

    1

    Large Square

    100

    80

    100

    1

    200

    180

    200

    1

    Varying Length

    50

    10

    30

    1

    20

    40

    1

    40

    60

    1

    50

    70

    1

    80

    100

    1

    180

    200

    1

    Small 2-probe

    5

    5

    -

    3

    10

    10

    -

    3

     

    References:

    W. Fu, L. Jiang, E.P. van Geest, L.M.C. Lima, G.F. Schneider Sensing at the Surface of Graphene Field‐Effect Transistors. Advanced Materials Vol 29(6), 2017.

    J. Ping, R. Vishnubhotla, A. Vrudhula, and A.T.C. Johnson Scalable Production of High-Sensitivity, Label-Free DNA Biosensors Based on Back-Gated Graphene Field Effect Transistors. ACS Nano Vol 10(9), 2016.