GaSb Gallium Antimonide Crystal Substrates
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Main Parameters of GaSb crystal substrates and wafers
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Single crystal
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Dopant
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Conductivity type
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Carrier concentration
cm-3
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Mobility(cm2/V.s)
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Dislocation density(cm-2)
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GaSb
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undoped,
intrinsic
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P
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(1-2)*10^17
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600-700
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<1*10^4
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GaSb
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Zn
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P
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(5-100)*10^17
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200-500
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<1*10^4
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GaSb
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Te
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N
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(1-20)*10^17
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2000-3500
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<1*10^4
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dimension (mm)
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Diameter 50.8x0.5mm, 10x10x0.5mm
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Surface roughness
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Surface roughness (Ra): <= 5A
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| Polishing |
Single side or double side polished
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