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GaSb, Gallium Antimonide Crystal Substrates - MSE Supplies

GaSb, Gallium Antimonide Crystal Substrates

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Main Parameters
Single crystal
Dopant
Conductivity type
Carrier concentration
cm-3
Mobility(cm2/V.s)
Dislocation density(cm-2)
Standard substrate
GaSb
/
   P
(1-2)*10^17
600-700
<1*10^4
Φ2″×0.5mm
Φ3″×0.5mm
GaSb
Zn
  P
(5-100)*10^17
200-500
<1*10^4 
Φ2″×0.5mm
Φ3″×0.5mm
GaSb
Te
  N
(1-20)´10^17
2000-3500
<1*10^4
Φ2″×0.5mm
Φ3″×0.5mm
dimension (mm)
Diameter 50.8x0.5mm, 10×10×0.5mm, 10×5×0.5mm
Surface roughness
Surface roughness(Ra): <= 5A
polishing
One side or double side

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