Ga2O3, Beta Gallium Oxide Wafer and Crystal Substrates, Semi-insulating Type

  • 1,29500

Beta Ga2O3, Beta Gallium Oxide Wafer and Crystal Substrates, semi-insulating type


Crystal structure: Monoclinic

Lattice parameter: 

a = 12.225 A

b = 3.040 A

c = 5.809 A

β = 103.7 degree

Melt point (℃): 1725

Density: 5.95(g/cm3)

Dielectric constants: 10 

Band Gap: 4.85 eV

Conductivity: Semi-insulating

Breakdown Voltage (V/cm): 8 MV/cm

Available Size: 5 x 5 mm, 10 x 10 mm,Ф1″ (1 inch diameter). Special sizes (smaller than 1 inch diameter) and orientations are available upon request.

Thickness: 450um +/- 50um, other thickness is available upon request

Polishing: Epi-ready, RMS < 0.5 nm on Ga face, optical polish on N face

Crystal Orientation: <010>

Ga Face Ra: ≤ 5Å (5µm × 5µm area), epi-ready

Packaging: Packing in class 1000 clean room with class 100 grade plastic bag

Beta gallium oxide (ß-Ga2O3) is a promising wide bandgap semiconductor crystal. Its wide bandgap of 4.8 - 4.9 eV, high breakdown field of 8 MV/cm, high dielectric constant  and good electron mobilities can be translated into a high voltage Baliga figure of merit (HV-BFOM) that is > 3000 times greater than that of Si, > 8 times greater than that of 4H-SiC, and > 4 times that of GaN. In addition, its high frequency Baliga figure of merit is ~150 times that of Si, ~3 times that of 4H-SiC, and 50% greater than that of GaN. 

Useful Literature: 

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Gallium oxide as host material for multicolor emitting phosphors

Development of gallium oxide power devices

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