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Customized GaN-on-SiC Epitaxial Wafers, 100mm and 150mm

To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.

Gallium Nitride on Silicon Carbide Epitaxial Wafers

Customized GaN-on-SiC epitaxial wafers are available from MSE Supplies. Please contact us for a quote. 

100mm or 150mm GaN Epi-wafers on SiC substrates (both N type and Semi-Insulating type are available).  Our GaN-on-SiC wafers are grown by the MOCVD process using AIXTRON and Veeco equipment.  Custom-made wafers in 4 inch and 6 inch sizes are available.  Our GaN epi-wafers have been proven for high performance DC/RF applications.

An example of GaN-on-SiC wafer epitaxial layer structure

In-situ SiN (optional)

Optional in-situ nitride available upon request

GaN cap

 

AlGaN Barrier

Barrier customized based on applications

AlN Spacer

High -uniformity spacer for mobility boost

GaN Channel

 

GaN:Fe Buffer

Buffer profile designed for high isolation and low RF trapping

AlN Nucleation

 

Semi-insulating SiC Substrate

 

 

Epi Structure

Key Specs

Characterization

Substrate thickness (μm)

500 ±25 or customized

Microsense Profilometer

Total epi thickness (micron)

0.6 ~ 2.5 or customized

PL

Dislocation density (/cm2)

≤ 108

XRD

XRD Rocking Curve

(004) ≤ 200 arc sec

(102) ≤ 250 arc sec

XRD

Epi sheet resistance (Rsh)

225 ~ 450 Ω/sq or customized

Lehighton

Rsh uniformity

Rsh Stdev. ≤ 2%

Lehighton

Carrier concentration (/cm2)

0.8 ~ 1.1 X1013 or

customized

Lehighton

Carrier mobility(cm2V-1s-1)

≥2100

Lehighton

Epi surface roughness (RMS)

≤ 0.5 nm

AFM

Wafer thickness (TTV)

≤ 10 μm

Microsense Profilometer

Wafer Bow & Wrap

≤ 30 μm

Microsense Profilometer

In situ Nitride

Available upon request

Available upon request

 

Representative device performance data using 0.45um process

Performance Target

Pinch-off Voltage (Ids=1mA/mm)

-2.7 ~ -3.3

V

Idss (Vgs=0V, Vds=10V)

700~800

mA/mm

Idmax (Vgs=1V, Vds=10V)

950~1100

mA/mm

Max. GM (Vds=10V)

~300

mS/mm

Breakdown VDG (Id=0.1mA/mm)

>200

V

Ft (Vds=50V)

>15

GHz

Rc

~0.35

Ohm.mm

Drain and gate leakage current (Vgs=- 5V, Vds=50V)

<0.01

mA/mm

Vf

1.2~1.3

V

Pulsed IV Drain Lag

>80

%