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Cerium doped Yttrium Aluminum Garnet (Ce:Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub>, YAG) Single Crystal Substrates,  MSE Supplies LLC

Cerium doped Yttrium Aluminum Garnet (Ce:Y3Al5O12, YAG) Single Crystal Substrates

  • $ 12950


Cerium doped YAG is a scintillator crystal and phosphor material.  The wavelength of the maximum emission at 550nm is well matched to CCD sensitivity. YAG(Ce) is a reasonably fast scintillator with a relative light yield of 21% of NaI(Tl).  YAG(Ce)'s light yield increases linearly with the total energy of the electron beam. Please contact us for custom made Cerium doped YAG crystals. 

Main Parameters of undoped YAG single crystal substrates

Material

Cerium doped-Yttrium Aluminum Garnet, Ce(3+):Y3Al5O12

CAS#

163584-80-3

Dopant Concentration

Ce(3+) 0.1~0.3 wt%

Crystal structure

Cubic, Ia-3d (m3m)

Unit cell constant

a = 12.01 A

Melt point (ºC)

1950

Density (g/cm3)

4.56

Hardness

8.5 Mohs

Thermal expansion (x 10-6 K-1 )

7.8 (111)

Thermal Conductivity (W m-1 K-1)

11.2

Refractive Index @1.064 µm

1.82

Decay Constant (ns)

70

Light Yield (photons/MeVy)

1.5 x 103

Sizes

5x5x0.5, 10x10x0.5, 

other sizes are available upon request

Surface polishing

Double side polished (epi-ready CMP)

Crystal orientation

 (100), (111), +/- 0.5 degree

Surface roughness, Ra:

< 0.5 nm (5 um x 5 um area)

Package

sealed in class 100 clean bags packed in class 1000 clean room

 

References:

H. Barbaran, M. S. Ghamsari, Morteza and I. Javaheri. Growth and spectral properties of Ce 3+ :YAG single crystal. Journal of Optoelectronics and Advanced Materials. Vol. 20. Pgs 431-434. (2018).

S. Nishiura , S. Tanabe , K. Fujioka , Y. Fujimoto and M. Nakatsuka. Preparation and Optical Properties of Transparent Ce:YAG Ceramics for High Power White LED. IOP Conf. Series: Materials Science and Engineering 1 (2009) 012031

S.M. Kaczmarek, G. Domianiak-Dzik, W. Ryba-Romanowski, and J. Wojtkowska. Changes in Optical Properties of Ce: YAG Crystals under Annealing and Irradiation Processing. Crystal Research and Technology, Vol. 34(8), Pgs. 1031-1036, 1999.