4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates, MSE Supplies

6 in Silicon Carbide 4H-SiC N-Type SiC Ingot

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6 in Silicon Carbide 4H-SiC N-Type SiC Ingot

Grade	Production Grade	Dummy Grade
Diameter	150.0 mm +/- 0.5 mm
Wafer Orientation	Off axis: 4.0 deg toward <11-20> +/-0.5 deg
Electrical Resistivity	0.015~0.028 ohm-cm
Primary Flat	{10-10} +/- 5.0 deg
Primary Flat Length	47.5 mm +/- 2.0 mm
Cracks inspected by high intensity light	<1mm in radial	<3mm in radial
Hex Plates inspected by high intensity light*	Cumulative area 1 %	Cumulative area 5 %
Polytype Areas inspected by high intensity light*	None	Cumulative area 10%
MicroPipe Density	<5cm^-2	<50cm^-2
Edge chipping	2 allowed, 1mm each	3 allowed, 3 mm each
Note	The slicing wafer thickness <1mm, >80% (two ends not included) meet the above requirements	The slicing wafer thickness <1mm, >70% (two ends not included) meet the above requirements

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.

** The scratches are checked on the Si face only.

Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up.

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property	4H-SiC Single Crystal	6H-SiC Single Crystal
Lattice Parameters (Å)	a=3.076 c=10.053	a=3.073 c=15.117
Stacking Sequence	ABCB	ABCACB
Density	3.21	3.21
Mohs Hardness	~9.2	~9.2
Thermal Expansion Coefficient (CTE) (/K)	4-5 x 10^-6	4-5 x10^-6
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c ~ 9.66	c ~ 9.66
Doping Type	N-type or Semi-insulating	N-type or Semi-insulating
Thermal Conductivity (W/cm-K @298K) (N-type, 0.02 ohm-cm)	a~4.2 c~3.7
Thermal Conductivity (W/cm-K @298K) (Semi-insulating type)	a~4.9 c~3.9	a~4.6 c~3.2
Band-gap (eV)	3.23	3.02
Break-Down Electrical Field (V/cm)	3-5 x 10⁶	3-5 x 10⁶
Saturation Drift Velocity (m/s)	2.0 x 10⁵	2.0 x 10⁵
Wafer and Substrate Sizes	Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.