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5 x 10 mm, M-plane or other off-axis plane, N-type, undoped, free-standing Gallium Nitride (GaN) single crystal, A plane (11-20),GaN-NP-A-N-S - MSE Supplies

5 x 10 mm, M plane (1-100), N-type, undoped, free-standing Gallium Nitride (GaN) single crystal, GaN-NP-M-N-S

  • 59500
  • Save $ 36400


  • Orientation: M plane (1-100) off angle toward C-axis -1˚ ± 0.2˚
  • Conductivity type: N-type undoped
  • Dimension: 5.0 mm x 10 mm ± 0.2 mm, 5.0 mm x 20 mm ± 0.2 mm
  • Thickness: 350 ± 25 μm
  • Usable area: > 90%
  • Total Thickness Variation: <15 μm
  • Bow: <20 μm
  • Resistivity (300K): <0.5 ohm.cm
  • Carrier Concentration:1e17cm-3
  • Mobility: 500 cm2/V*s
  • Dislocation Density: < 5x10^5 cm^-2 
  • Polishing:  front surface Ra < 0.2nm. Epi-ready polished. back surface fine ground.
  • Package: packaged in a class 100 clean room environment, in single wafer containers, under nitrogen atmosphere. 

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