2) Dry Thermal Oxide Silicon Wafer, Prime Grade">
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Silicon/Silicon Dioxide (Si/SiO<sub>2</sub>) Thermal Oxide Silicon Wafer and Substrates, Prime Grade, MSE Supplies

4" Silicon/Silicon Dioxide (Si/SiO2) Dry Thermal Oxide Silicon Wafer, Prime Grade

  • $ 5995
  • Save $ 800

4" Silicon/Silicon Dioxide (Si/SiO2) Dry Thermal Oxide Silicon Wafer, Prime Grade

Thermal oxide (silicon dioxide, SiO2) layer is formed on silicon wafer surface at an  elevated temperature in the presence of an oxidant. This process is commonly referred to as a thermal oxidation process. The SiO2  thermal oxide thin film is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. 

Silicon/silicon dioxide (Si/SiO2) thermal oxide wafers and substrates are widely used for FET substrates, surface microscopy analysis, ellipsometry measurements and X-ray studies. MSE Supplies also offers monolayer graphene film on Si/SiO2 substrate. (10mm x 10mm, 1 inch x 1 inch, and more...)

We can offer a variety of choices for customization. Please contact us for your requirements of customized products. 

Specifications:

  • Type of silicon wafer: P type 
  • Silicon wafer doping: Boron-doped
  • SiO2 thickness: 300nm (+/-10%).
  • Electrical resistivity: 1-5 ohm-cm
  • Crystal orientation: <100>
  • Wafer diameter: 100+/-0.3 mm
  • Wafer thickness: 525+/-20 um
  • Surface polishing: Single Side Polished (SSP)