Menu
Cart
Sapphire Wafer, 4 inch, C-plane (0001), Single Crystal Al2O3, MSE Supplies

Sapphire Wafer, 4 inch, C-plane (0001), Single Crystal Al2O3

  • 8290
  • Material: High Purity, single crystal Al2O3
  • Dimension: Φ100 mm ± 0.1 mm
  • Thickness: 0.56 mm standard
  • Lattice Parameter: a=4.785 A, c=12.991 A
  • Density: 3.98 g/cm3
  • Orientation: C plane (0001) off M plane 0.2± 0.1 degree, R-plane (1-102), A-plane (11-20), M-plane (10-10) are available per request.
  • Primary flat length: 32.5 ± 2.5 mm
  • Total Thickness Variation: <20 μm
  • Bow: <20 μm
  • Warp: <20 μm
  • Polishing: single side polished Ra < 0.2 nm (AFM), double side polished is available upon request.
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere. 
We Also Recommend
2 inch Silicon Carbide Wafers (6H or 4H) , N-type or Semi-insulating Crystal Substrates, MSE Supplies

2 inch Silicon Carbide Wafers (6H or 4H) , N-type or Semi-insulating Crystal Substrates
3 inch 76 mm Silicon Carbide Wafers (4H-SiC), N-type or Semi-insulating Crystal Substrates, MSE Supplies

3 inch 76 mm Silicon Carbide Wafers (4H-SiC), N-type or Semi-insulating Crystal Substrates
4 inch 100 mm Silicon Carbide (4H-SiC) Wafer, N-type or Semi-insulating Crystal Substrates, MSE Supplies

4 inch 100 mm Silicon Carbide (4H-SiC) Wafer, N-type or Semi-insulating Crystal Substrates
6 inch 150 mm Silicon Carbide (4H-SiC) Wafer, N-type or Semi-insulating Crystal Substrates, MSE Supplies

6 inch 150 mm Silicon Carbide (4H-SiC) Wafer, N-type or Semi-insulating Crystal Substrates
BaTiO3, BTO, Barium Titanate Crystal Substrates, MSE Supplies

BaTiO3, BTO, Barium Titanate Crystal Substrates