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4 inch Sapphire Wafer, C-plane (0001), Single Crystal Al2O3, SSP or DSP

  • 8290


Sapphire Wafer, 4 inch, C-plane (0001), SEMI Prime Grade
  • Material: High Purity, >99.99%, single crystal Al2O3
  • Dimension: Φ100.0 mm ± 0.1 mm
  • Thickness: 650 um ± 25 um (SSP) , 600 um ± 25 um (DSP)
  • Lattice Parameter: a=4.785 A, c=12.991 A
  • Density: 3.98 g/cm3
  • Orientation: C plane sapphire (0001) off M plane 0.2± 0.1 degreeR-plane (1-102), A-plane (11-20), M-plane (10-10) are available.
  • Primary flat orientation: A-plane ± 0.2 degree
  • Primary flat length: 30.0 ± 1 mm
  • Total Thickness Variation (TTV): <20 μm
  • Bow: <20 μm
  • Warp: <20 μm
  • Polishing: single side polished (SSP) front side epi-ready surface Ra < 0.3 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 um, or double side polished (DSP) both front and back sides epi-ready surface Ra < 0.3 nm (AFM)
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere. 

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