4 inch Sapphire Wafer C-Plane (0001), Single Crystal Al2O3, SSP or DS

4 inch Sapphire Wafer C-Plane Single or Double Side Polish Al2O3 Single Crystal

Material: High Purity, >99.99%, single crystal Al₂O₃
Dimension: Φ100.0 mm ± 0.1 mm
Thickness: 650 um ± 25 um (SSP) , 600 um ± 25 µm (DSP)
Lattice Parameter: a=4.785 Å, c=12.991 Å
Density: 3.98 g/cm³
Orientation: C plane sapphire (0001) off M plane 0.2± 0.1 degree, R-plane (1-102), A-plane (11-20), M-plane (10-10) are available.
Primary flat orientation: A-plane ± 0.2 degree
Primary flat length: 30.0 ± 1 mm
Total Thickness Variation (TTV): <20 μm
Bow: <20 μm
Warp: <20 μm
Polishing: single side polished (SSP) front side epi-ready surface Ra < 0.5 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 µm, or double side polished (DSP) both front and back sides epi-ready surface Ra < 0.5 nm (AFM)
Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.

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