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4 inch Sapphire Wafer C-Plane Single or Double Side Polish Al<sub>2</sub>O<sub>3</sub> Single Crystal, MSE Supplies LLC

4 inch Sapphire Wafer C-Plane Single or Double Side Polish Al2O3 Single Crystal

  • $ 8290
Qty (pieces) Price (per piece)
1 - 1 $ 82.90
2 - 9 $ 75.90
10 - 24 $ 69.90
25 - 25+ $ 65.90

Sapphire Wafer, 4 inch, C-plane (0001), Prime Grade

  • Material: High Purity, >99.99%, single crystal Al2O3
  • Dimension: 100.0 mm +/- 0.1 mm
  • Thickness: 650 um +/- 25 um (SSP) , 600 um +/- 25 um (DSP)
  • Lattice Parameter: a=4.785 A, c=12.991 A
  • Density: 3.98 g/cm3
  • Orientation: C plane sapphire (0001) off M plane 0.2+/- 0.1 degree, R-plane (1-102), A-plane (11-20), M-plane (10-10) are available.
  • Primary flat orientation: A-plane +/- 0.2 degree
  • Primary flat length: 30.0 +/- 1 mm
  • Total Thickness Variation (TTV): <20 um
  • Bow: <20 um
  • Warp: <20 um
  • Dielectric Strength: 4.8 x 105 V/cm
  • Dielectric Constant: 11.5 (1 MHz) along C axis, 9.3 (1 MHz) perpendicular to C axis
  • Dielectric Loss Tangent (a.k.a. dissipation factor): less than 1 x 10-4
  • Thermal Conductivity: 42W/(m.K) at 20℃ 
  • Polishing: single side polished (SSP) front side epi-ready surface Ra < 0.5 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 um, or double side polished (DSP) both front and back sides epi-ready surface Ra < 0.5 nm (AFM)
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.