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4 inch Patterned Sapphire Substrates (PSS) for Light Emitting Diodes (LEDs)

  • $ 12490


4 inch Patterned Sapphire Substrates (PSS) for Light Emitting Diodes (LEDs)

Patterned Sapphire Substrates (PSS) is a micro-patterned sapphire substrate. It has been widely used in high-power GaN-based Light Emitting Diodes (LEDs), which are the most promising alternative light source for general lighting. With the breakthrough of the patterned-sapphire substrate technique, the efficacy of high-brightness GaN-based LEDs has been driven to a record high of 150 lm/W. The efficacy enhancement of GaN-based LEDs with the patterned-sapphire substrate technique is generally attributed to the improvement in both light extraction efficiency and internal quantum efficiency. The regular patterns created on the sapphire substrate counteracts the effect of the total internal reflection at the GaN/sapphire interface. And, the enhancement in the internal quantum efficiency benefits from the reduction of threading dislocations by possible lateral growth of GaN epilayer on the patterned sapphire substrate.

MSE Supplies can customize the patterned sapphire substrates per your request, such as size, thickness, orientation and patterns. Please contact us for bulk order and customizations. 

  • Product SKU#: WA0433
  • Material: High Purity, >99.99%, single crystal Al2O3
  • Dimension: 100.0 +/- 0.1 mm
  • Thickness: 660 +/- 10 um
  • Polishing: Single side polished, Epi-ready
  • Orientation: C plane sapphire (0001) off M plane 0.2+/- 0.1 degree
  • Primary flat orientation: A-plane +/- 0.2 degree
  • Primary flat length: 30.0 +/- 1 mm
  • Total Thickness Variation (TTV): ≤10 um
  • Bow: -10~0 um
  • Warp: ≤ 15um
  • Pattern Width: 2.75~2.85 um
  • Pattern Height: 1.65~1.85 um
  • Pattern Pitch: 3.0 +/- 0.05 um

Reference:

1. Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate, J. Mater. Res., Vol. 27, No. 6, Mar 28, 2012

2. Novel Scalable Transfer Approach for Discrete III-Nitride Devices Using Wafer-Scale Patterned h-BN/Sapphire Substrate for Pick-and-Place Applications, Adv. Mater. Technol. 2019, 4, 1900164

3. Photoelectrochemical Liftoff of Patterned Sapphire Substrate for Fabricating Vertical Light-Emitting Diode, in IEEE Photonics Technology Letters, vol. 24, no. 19, pp. 1775-1777, Oct.1, 2012, doi: 10.1109/LPT.2012.2214476.


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